Modeling of ballistic monolayer black phosphorus MOSFETs

RJ Prentki, F Liu, H Guo - IEEE Transactions on Electron …, 2019 - ieeexplore.ieee.org
In this paper, we present two accurate physics-based models of ballistic metal-oxide-
semiconductor field-effect transistors (MOSFETs), both using less than ten parameters …

[图书][B] Theory and simulation of novel low-power nanotransistors

RJ Prentki - 2021 - search.proquest.com
Moore's law predicts an exponential growth of the number of transistors on integrated
circuits (ICs). Transistors are now being downscaled to nanometric dimensions, making it …

Compact Modeling of Layered Materials Transistors for More-Than-Moore Applications

E Yarmoghaddam - 2020 - search.proquest.com
Over the past four decades, the electronics industry has benefited tremendously from the
metal-oxide-semiconductor field-effect-transistors (MOSFET) miniaturization. In recent years …