Developing effective device architectures for energy technologies—such as solar cells,
rechargeable batteries or fuel cells—does not only depend on the performance of a single …

We present a first-principles framework to extract deformation potentials in silicon based on
density-functional theory (DFT) and density-functional perturbation theory (DFPT). We …

The crystalline silicon (c-Si) based photovoltaic (PV) technology is most dominated among
other PV technologies. The world record highest efficiency of 26.7% and 26.1% on n & p …

Passivated emitter and rear contact (PERC) on p‐type mono silicon has a roadmap for
achieving> 24% efficiency. The decrease of the full‐area rear metal contact to partial rear …

In a world where data is increasingly important for making breakthroughs, microelectronics
is a field where data is sparse and hard to acquire. Only a few entities have the infrastructure …

Superior scalability and better gate-to-channel capacitive coupling can be achieved with
adopting gate-all-around (GAA) device architecture. However, compared against FinFET …

In this study, the impact of orientation of metal-gate granularity on analog figures-of-merit
(FOMs) in high-k/metal-gate junctionless (JL) fin-field-effect transistor (FinFET) and gate-all …

Various simulations of a GaN HEMT are used to study the behaviors of two different energy-
transport models: the Fermi kinetics transport model and a hydrodynamics transport model …

Abstract Vertically stacked Nanosheet Field Effect Transistor (NSFET) is considered the most
promising substitution for FinFET. In order to prevent making metallurgical junctions, based …

This article offers a comprehensive noise analysis of a GaAs 0.2 Sb 0.8/GaSb heterojunction
Source-All-Around Vertical Tunnel FET (SAA-VTFET), examining generation-recombination …