The accelerated evolution of artificial intelligence (AI) and semiconductor technologies has
fostered a mutually reinforcing relationship, whereby each technology has contributed to the …

Abstract Embedded Dynamic RAM (eDRAM) has become a key solution for large-capacity
cache in high-performance processors. A heterogeneous two transistor capacitorless …

Although the irreplaceable position of silicon (Si) semiconductor materials in the field of
information has become a consensus, new materials continue to be sought to expand the …

Dynamic random access memory (DRAM) has been a cornerstone of modern computing,
but it faces challenges as technology scales down, particularly due to the mismatch between …

The rapid development of edge artificial intelligence (AI) raises high requirements for data-
intensive neural network (NN) computing and storage of edge devices, under a limited chip …

In this work, we demonstrate capacitorless dynamic random access memory (DRAM) and
complementary metal-oxide–semiconductor (CMOS) logic circuits by vertically stacked ZnO …

In this study, we present a vertical bypass resistive random access memory (VB-RRAM) that
integrates interface-type resistive switching RRAM with excellent memory characteristics for …

In this work, we systematically study the impact of capacitive coupling effect on the memory
characteristics of 2T0C DRAM by both theoretical modeling and experiments. Then, based …

In the era of intelligent IoT, huge amount of sensor data is collected and then transmitted to
processor elements in edge devices or cloud servers. The latency and energy consumption …

In the past several decades, the density and performance of transistors in a single chip have
been increasing based on Moore's Law. However, the slowdown of feature size reduction …