Developments in IC fabrication, emerging high-reliability markets, and government
regulations indicate potential for significant shifts in how reliability fits within IC development …

In this paper, the strategic review of different materials that are used in FinFET structure is
studied. This is achieved by using carefully designed source/drain spacers and doped …

The Reaction-Diffusion-Drift model is validated as a trap generation framework during Bias
Temperature Instability (BTI), Stress Induced Leakage Current (SILC), and Time Dependent …

Threshold voltage shift (ΔVT) due to Negative Bias Temperature Instability (NBTI) in p-
MOSFETs is modeled using the BTI Analysis Tool (BAT) framework. The ΔV T time kinetics …

Gate layouts of spin-qubit devices are commonly adapted from previous successful devices.
As qubit numbers and device complexity increase, modeling new device layouts and …

The physics-based BTI Analysis Tool (BAT) is used to model the time kinetics of threshold
voltage shift (ΔV T) during and after NBTI in p-channel planar bulk and FDSOI MOSFETs …

A complete comparison for 14 nm FinFET and NWFET with stacked nanowires was carried
out. The electrical and thermal performances in two device structures were analyzed based …

A stochastic reaction-diffusion drift model is used to simulate the time kinetics of interface
and bulk oxide traps responsible for bias temperature instability (BTI), stress-induced …

A technology CAD (TCAD) setup is used to calculate the channel hot electron (CHE)
induced parametric drift in n-MOSFETs. The setup uses reaction-diffusion-drift model and …

The physical parameters of digital devices have been affected by process variability The
paper is focused on subthreshold performance characterization of FET with Visual TCAD …