Investigation of nodal line spin-gapless semiconductors using first-principles calculations

G Ding, J Wang, H Chen, X Zhang… - Journal of Materials …, 2022 - pubs.rsc.org
Nodal line spin-gapless semiconductors (NLSGSs) are a new type of topological spintronic
material with a possible high Curie temperature, 100% spin polarization, high carrier …

Ferromagnetic ordering in a THAB exfoliated WS2 nanosheet

A Debnath, BK Shaw, S Bhattacharya… - Journal of Physics D …, 2021 - iopscience.iop.org
Because of the important role of two-dimensional (2D) magnetic semiconductors in low-
dimensional spintronic devices, the generation of ferromagnetism within an ultrathin …

Interfacial negative magnetization in Ni encapsulated layer-tunable nested MoS 2 nanostructure with robust memory applications

S Bhattacharya, T Ohto, H Tada, SK Saha - Nanoscale Advances, 2024 - pubs.rsc.org
Combining interfacial interactions and layer-number tunability, the evolution of magnetism in
low-dimensional diamagnetic systems like MoS2 is indeed an interesting area of research …

Local dielectric function of hBN-encapsulated WS2 flakes grown by chemical vapor deposition

M Ferrera, A Sharma, I Milekhin, Y Pan… - Journal of Physics …, 2023 - iopscience.iop.org
Hexagonal boron nitride (hBN), sometimes referred to as white graphene, receives growing
interest in the scientific community, especially when combined into van der Waals (vdW) …

Observation of ferrimagnetic ordering in chemically synthesized 2D Cr2S3 nanosheets

A Debnath, T Mondal, G Mahapatra… - Journal of Applied …, 2023 - pubs.aip.org
It is established that 2D magnetic materials are the ideal platform for building up modern-day
electronic and spintronic devices. The popular ways to achieve 2D magnetic materials are …