A strategic review on gallium oxide based power electronics: Recent progress and future prospects
Silicon based power devices have limited capabilities in terms of voltage handling and
switching speeds, leading to rampant research in the field of next generation wide bandgap …
switching speeds, leading to rampant research in the field of next generation wide bandgap …
Applications and impacts of nanoscale thermal transport in electronics packaging
RJ Warzoha, AA Wilson… - Journal of …, 2021 - asmedigitalcollection.asme.org
This review introduces relevant nanoscale thermal transport processes that impact thermal
abatement in power electronics applications. Specifically, we highlight the importance of …
abatement in power electronics applications. Specifically, we highlight the importance of …
Packaged Ga2O3 Schottky Rectifiers With Over 60-A Surge Current Capability
Ultrawide-bandgap gallium oxide (Ga 2 O 3) devices have recently emerged as promising
candidates for power electronics; however, the low thermal conductivity (k T) of Ga 2 O 3 …
candidates for power electronics; however, the low thermal conductivity (k T) of Ga 2 O 3 …
Ultra-low reverse leakage in large area kilo-volt class β-Ga2O3 trench Schottky barrier diode with high-k dielectric RESURF
We introduce vertical Schottky barrier diodes (SBDs) based on β-Ga 2 O 3 with trench
architecture, featuring a high-permittivity dielectric RESURF structure. These diodes are …
architecture, featuring a high-permittivity dielectric RESURF structure. These diodes are …
Development of a SiC JFET-based six-pack power module for a fully integrated inverter
F Xu, TJ Han, D Jiang, LM Tolbert… - … on Power Electronics, 2012 - ieeexplore.ieee.org
In this paper, a fully integrated silicon carbide (SiC)-based six-pack power module is
designed and developed. With 1200-V, 100-A module rating, each switching element is …
designed and developed. With 1200-V, 100-A module rating, each switching element is …
Manufacturing metrology for c-Si module reliability and durability Part III: Module manufacturing
This article is the third and final article in a series dedicated to reviewing each process step
in crystalline silicon (c-Si) photovoltaic (PV) module manufacturing process: feedstock …
in crystalline silicon (c-Si) photovoltaic (PV) module manufacturing process: feedstock …
Thermomechanical assessment of die-attach materials for wide bandgap semiconductor devices and harsh environment applications
LA Navarro, X Perpina, P Godignon… - IEEE transactions on …, 2013 - ieeexplore.ieee.org
Currently, the demand by new application scenarios of increasing operating device
temperatures in power systems is requiring new die-attach materials with higher melting …
temperatures in power systems is requiring new die-attach materials with higher melting …
Towards Physics-Informed Machine Learning-Based Predictive Maintenance for Power Converters–A Review
Predictive maintenance for power electronic converters has emerged as a critical area of
research and development. With the rapid advancements in deep-learning techniques, new …
research and development. With the rapid advancements in deep-learning techniques, new …
Third quadrant conduction loss of 1.2–10 kV SiC MOSFETs: Impact of gate bias control
The third quadrant (3rd-quad) conduction of power MOSFETs involves competing current
sharing between the metal-oxide-semiconductor (MOS) channel and the body diode …
sharing between the metal-oxide-semiconductor (MOS) channel and the body diode …
Surge current capability of ultra-wide-bandgap Ga2O3 Schottky diodes
Abstract β-Ga 2 O 3 is an emerging ultra-wide-bandgap semiconductor material offering
superior power material limits over Si, SiC, and GaN as well as the availability of large …
superior power material limits over Si, SiC, and GaN as well as the availability of large …