We report on the low-temperature growth of crystalline Ga2O3 films on Si, sapphire, and
glass substrates using plasma-enhanced atomic layer deposition (PEALD) featuring a …

Recent designs have allowed hollow cathode gas plasma sources to be adopted for use in
plasma-enhanced atomic layer deposition with the benefit of lower oxygen contamination for …

The high thermal conductivity of polycrystalline diamond makes it ideally suited for thermal
management solutions for gallium nitride (GaN) devices, with a diamond layer grown on an …

Aluminum nitride (AlN) thin film has considerable properties, which makes it advantages for
a variety of applications. AlN films were prepared by remote plasma atomic layer deposition …

Combining different material processing techniques is one of the keys to obtain materials
that depict synergistic properties. In this review, we have reviewed a combination of two …

AlGaN films with high Al content (Al/Ga∼ 5.5) were successfully grown via thermal atomic
layer deposition at low temperature (342° C) using trimethylaluminum and triethylgallium as …

Aluminum nitride (AlN) film is a promising material which is used in various fields. In this
study, AlN films with different plasma powers were grown by remote plasma atomic layer …

In this work, we have studied the role varying nitrogen plasma compositions play in the low-
temperature plasma-assisted growth of indium nitride (InN) thin films. Films were deposited …

In this work, we report on low-temperature as-grown single-phase epitaxial beta-gallium
oxide (β-Ga2O3) films on c-plane sapphire at the substrate temperature of 240° C using …

Aluminum-doped and undoped zinc oxide films were investigated as potential front and rear
contacts of perovskite single and perovskite/silicon tandem solar cells. The films were …