Low-dimensional wide-bandgap semiconductors for UV photodetectors
Z Li, T Yan, X Fang - Nature Reviews Materials, 2023 - nature.com
Accurate UV light detection is a crucial component in modern optoelectronic technologies.
Current UV photodetectors are mainly based on wide-bandgap semiconductors (WBSs) …
Current UV photodetectors are mainly based on wide-bandgap semiconductors (WBSs) …
High responsivity and flexible deep-UV phototransistor based on Ta-doped β-Ga2O3
Deep-ultraviolet (DUV) phototransistors have shown great potential applications in UV
imaging, artificial intelligence, and wearable optoelectronics. Among a large number of wide …
imaging, artificial intelligence, and wearable optoelectronics. Among a large number of wide …
Superior AlGaN/GaN‐Based Phototransistors and Arrays with Reconfigurable Triple‐Mode Functionalities Enabled by Voltage‐Programmed Two‐Dimensional …
H Zhang, F Liang, L Yang, Z Gao, K Liang… - Advanced …, 2024 - Wiley Online Library
High‐quality imaging units are indispensable in modern optoelectronic systems for accurate
recognition and processing of optical information. To fulfill massive and complex imaging …
recognition and processing of optical information. To fulfill massive and complex imaging …
Aqueous‐Printed Ga2O3 Films for High‐Performance Flexible and Heat‐Resistant Deep Ultraviolet Photodetector and Array
High deep‐ultraviolet (DUV) sensitivity and excellent flexibility of ultrathin gallium oxide
(Ga2O3) film with an ultrawide bandgap endow its extreme propensity in flexible DUV …
(Ga2O3) film with an ultrawide bandgap endow its extreme propensity in flexible DUV …
[HTML][HTML] Solution-processed flexible broadband ZnO photodetector modified by Ag nanoparticles
In this work, we present flexible broadband photodetectors (PDs) fabricated by a deposition
of nanostructured zinc oxide (ZnO) films on polyimide (PI) substrates by using cheap and …
of nanostructured zinc oxide (ZnO) films on polyimide (PI) substrates by using cheap and …
Noble and Non-Noble Metal Based Catalysts for Electrochemical Nitrate Reduction to Ammonia: Activity, Selectivity and Stability
Abstract Excessive nitrate (NO3−) contamination has emerged as a critical environmental
issue owing to the widespread use of nitrogen-based fertilizers, fossil fuel combustion, and …
issue owing to the widespread use of nitrogen-based fertilizers, fossil fuel combustion, and …
Non‐Ultrawide Bandgap Semiconductor GaSe Nanobelts for Sensitive Deep Ultraviolet Light Photodetector Application
In this paper, the authors report the fabrication of a sensitive deep ultraviolet (DUV)
photodetector by using an individual GaSe nanobelt with a thickness of 52.1 nm, which …
photodetector by using an individual GaSe nanobelt with a thickness of 52.1 nm, which …
Synthesis and Characteristics of Transferrable Single‐Crystalline AlN Nanomembranes
Single‐crystalline inorganic semiconductor nanomembranes (NMs) have attracted great
attention over the last decade, which poses great advantages to complex device integration …
attention over the last decade, which poses great advantages to complex device integration …
Distinct UV–visible responsivity enhancement of GaAs photodetectors via monolithic integration of antireflective nanopillar structure and UV absorbing IGZO layer
Broadband ultraviolet–visible photodetection has been attracting growing research interests
in fields of environment, energy, and imaging. Considering the suitable bandgap and high …
in fields of environment, energy, and imaging. Considering the suitable bandgap and high …
Antireflective GaN nanoridge texturing by metal-assisted chemical etching via a thermally dewetted Pt catalyst network for highly responsive ultraviolet photodiodes
Antireflective (AR) surface texturing is a feasible way to boost the light absorption of
photosensitive materials and devices. As a plasma-free etching method, metal-assisted …
photosensitive materials and devices. As a plasma-free etching method, metal-assisted …