Dopant profiling by a scanning electron microscope possesses great potential in the
semiconductor industry due to its rapid, contactless, non-destructive, low cost, high spatial …

The surface potential on n-type Si (111)-7× 7 surface was measured at 78 K using high-
frequency heterodyne-Kelvin probe force microscopy (HF-he-KPFM) method with atomic …

Scanning probe microscopy and corresponding evaluation methods enabled nanoscale
observation of power semiconductor devices regardless of the material and structure types …

We have observed a commercial silicon-carbide Schottky barrier diode (SiC-SBD) using our
novel analysis system, in which atomic force microscopy (AFM) is combined with both Kelvin …

Surface properties of superprotonic (K 1-х (NH 4) x) 3 H (SO 4) 2 (x≥ 0.57) single crystals
and their evolution under humidity were studied by optical polarization microscopy …

We have proposed and demonstrated a direct imaging method in dual bias modulation
electrostatic force microscopy (DI-DEFM) to observe the frequency response of the …

The oscillating behavior of a micro-cantilever probe plays a central role in the atomic force
microscope for studying a nanoscale sample. The oscillatory phenomena in the microscope …

Atomic force microscopy (AFM) was combined with scanning electron microscopy (SEM) to
investigate electronic devices. In general, under observation using an optical microscope, it …

We have imaged an n− layer of a commercial silicon fast recovery diode (Si-FRD) under
applied bias voltages using frequency modulation atomic force microscopy and Kelvin probe …

The carrier concentration in a gallium nitride (GaN) substrate of a GaN-on-GaN wafer grown
by hydride vapor phase epitaxy (HVPE) was evaluated by Raman spectroscopy and Kelvin …