Status and outlook of metal–inorganic semiconductor–metal photodetectors

L Shi, K Chen, A Zhai, G Li, M Fan… - Laser & Photonics …, 2021 - Wiley Online Library
Metal–inorganic semiconductor–metal photodetectors (MSM‐PDs) have received great
attention in many areas, such as optical fiber communication, sensing, missile guidance …

High‐Performance Harsh‐Environment‐Resistant GaOX Solar‐Blind Photodetectors via Defect and Doping Engineering

X Hou, X Zhao, Y Zhang, Z Zhang, Y Liu… - Advanced …, 2022 - Wiley Online Library
Abstract Gallium oxide (Ga2O3), with an ultrawide bandgap, is currently regarded as one of
the most promising materials for solar‐blind photodetectors (SBPDs), which are greatly …

[HTML][HTML] Ultraviolet photodetectors: From photocathodes to low-dimensional solids

A Rogalski, Z Bielecki, J Mikołajczyk, J Wojtas - Sensors, 2023 - mdpi.com
The paper presents the long-term evolution and recent development of ultraviolet
photodetectors. First, the general theory of ultraviolet (UV) photodetectors is briefly …

[HTML][HTML] High-temperature flexible WSe2 photodetectors with ultrahigh photoresponsivity

Y Zou, Z Zhang, J Yan, L Lin, G Huang, Y Tan… - Nature …, 2022 - nature.com
The development of high-temperature photodetectors can be beneficial for numerous
applications, such as aerospace engineering, military defence and harsh-environments …

High-performance ultraviolet photodetector based on single-crystal integrated self-supporting 4H-SiC nanohole arrays

K Wang, H Wang, C Chen, W Li, L Wang… - … Applied Materials & …, 2023 - ACS Publications
Currently, the photodetectors (PDs) assembled by vertically aligned nanostructured arrays
have attracted intensive interest owing to their unique virtues of low light reflectivity and …

P-type β-Ga2O3 metal-semiconductor-metal solar-blind photodetectors with extremely high responsivity and gain-bandwidth product

ZX Jiang, ZY Wu, CC Ma, JN Deng, H Zhang, Y Xu… - Materials Today …, 2020 - Elsevier
P-type β-Ga 2 O 3 films deep-ultraviolet (DUV) solar-blind metal-semiconductor-metal
(MSM) photodetectors (PDs) are fabricated with extremely high photoresponsivity (9.5× 10 3 …

High-temperature photocurrent mechanism of β-Ga2O3 based metal-semiconductor-metal solar-blind photodetectors

BR Tak, M Garg, S Dewan… - Journal of Applied …, 2019 - pubs.aip.org
High-temperature operation of metal–semiconductor–metal (MSM) UV photodetectors
fabricated on pulsed laser deposited β-Ga 2 O 3 thin films has been investigated. These …

Ultrahigh-Performance Solar-Blind Photodetector Based on -Phase- Dominated Ga2O3 Film With Record Low Dark Current of 81 fA

X Hou, H Sun, S Long, GS Tompa… - IEEE Electron …, 2019 - ieeexplore.ieee.org
α-phase-dominated Ga 2 O 3 films were heteroepitaxially grown on c-plane sapphire
substrate by metalorganic chemical vapor deposition (MOCVD), followed by the fabrication …

High-sensitivity β-Ga2O3 solar-blind photodetector on high-temperature pretreated c-plane sapphire substrate

LX Qian, HF Zhang, PT Lai, ZH Wu… - Optical Materials Express, 2017 - opg.optica.org
Recently, monoclinic Ga_2O_3 (β-Ga_2O_3) photodetectors (PDs) have been extensively
studied for various commercial and military applications due to the merits of intrinsic solar …

[HTML][HTML] Solar-blind photodetectors for harsh electronics

DS Tsai, WC Lien, DH Lien, KM Chen, ML Tsai… - Scientific reports, 2013 - nature.com
We demonstrate solar-blind photodetectors (PDs) by employing AlN thin films on Si (100)
substrates with excellent temperature tolerance and radiation hardness. Even at a bias …