Graphene growth by thermal decomposition of silicon carbide (SiC) is a technique that
produces wafer-scale, single-orientation graphene on an insulating substrate. It is often …

Material growth on a dangling-bond-free interface such as graphene is a challenging
technological task, which usually requires additional surface pre-treatment steps …

We report the fabrication and measurement of top gated epitaxial graphene pn junctions
where exfoliated hexagonal boron nitride (h-BN) is used as the gate dielectric. The four …

Intercalation experiments on epitaxial graphene are attracting a lot of attention at present as
a tool to further boost the electronic properties of 2D graphene. In this work, we studied the …

Series connection of four quantum Hall effect (QHE) devices based on epitaxial graphene
films was studied for realization of a quantum resistance standard with an up-scaled value …

Charge carrier scattering at grain boundaries (GBs) in a chemical vapor deposition (CVD)
graphene reduces the carrier mobility and degrades the performance of the graphene …