To enable high volume manufacturing with extreme ultraviolet (EUV) lithography, a pellicle
membrane is needed to protect the reticle from particles at EUV source powers beyond 250 …

Background: Reliable photomask metrology is required to reduce the risk of yield loss in the
semiconductor manufacturing process as well as for the research on absorber materials …

Reliable photomask metrology is required to reduce the risk of yield loss in the
semiconductor manufacturing process. Actinic pattern inspection (API) of EUV reticles is a …

Background: An extreme ultraviolet (EUV)-transparent pellicle must be used during
lithography to protect the photomask from fall-on particles. A pellicle made of free-standing …

Research on carbon nanotube (CNT) films for the EUV pellicle application was initiated at
imec in 2015 triggered by the remarkable optical, mechanical, and thermal properties of the …

Background: The purpose of EUV pellicles is to protect the surface of EUV lithography
masks from particle contamination. It is important to ensure that the optical characteristics of …

The production of modern semiconductor devices is based on photolithography, a process
through which a pattern engraved on a mask is projected on a silicon wafer coated with a …

The purpose of EUV pellicles is to protect the surface of EUV lithography masks from particle
contamination. Currently several pellicle prototypes are being developed. It is important to …

Carbon nanotubes (CNTs) have been a subject of development and investigation in the last
two decades due to their superior physical and chemical properties, such as high electrical …

The present disclosure relates to an extreme ultraviolet lithography, EUVL, device
comprising: a reticle comprising a lithographic pattern to be imaged on a target wafer; a light …