In this paper, we present the design of an ultracompact monolithic millimeter-wave
integrated circuit Doherty power amplifier (DPA) using a novel reconfigurable input network …

This article presents a 7-bit wideband passive attenuator with low insertion loss (IL) and high
attenuation accuracy in 55-nm CMOS technology. The π-type and bridge-T-type attenuation …

A K-/Ka-band distributed attenuator in a 28-nm CMOS process is presented for a phased
array. The proposed voltage-controlled distributed attenuator is designed using nonuniform …

This article presents the analysis and design of a cell-based passive digital attenuator
operating at the millimeter-wave (mmW) and terahertz (THz) regimes. Each attenuator cell …

In this brief, the analysis, design, and measured results of a fully integrated 7-bit step
attenuator implemented in a 0.25-μm Silicon-Germanium (SiGe) BiCMOS process …

To achieve a broadband and high-power tolerance voltage variable attenuator (VVA), this
article replaces the single-gate high-electron-mobility transistor (HEMT) with a dual-gate …

This article presents a new magnetically switchable coupled-lines (MSCLs) attenuator
topology. The attenuator is passive and features compact size, ultralow insertion loss (IL) …

A transmission-type attenuator with varactor-based tunable attenuation is presented. The
design adopts a standard 50-host microstrip line equipped with varactor-loaded stubs on its …

In a beamforming circuit for a modern broadband phased-array system, high accuracy and
compactness have received sufficient attention as they are directly related to side lobe level …

This paper presents millimeter-wave (mmW) wide-band dual-function switching attenuator
chips based on gallium arsenide (GaAs) pseudomorphic high electron mobility transistor …