A review of germanium-antimony-telluride phase change materials for non-volatile memories and optical modulators
Chalcogenide phase change materials based on germanium-antimony-tellurides (GST-
PCMs) have shown outstanding properties in non-volatile memory (NVM) technologies due …
PCMs) have shown outstanding properties in non-volatile memory (NVM) technologies due …
Composition-controlled atomic layer deposition of phase-change memories and ovonic threshold switches with high performance
Chalcogenide compounds are the main characters in a revolution in electronic memories.
These materials are used to produce ultrafast ovonic threshold switches (OTSs) with good …
These materials are used to produce ultrafast ovonic threshold switches (OTSs) with good …
Enhanced surface effects and optical property modulation of Ge2Sb2Te5 by pulsed laser irradiation
J Liang, G Chen, X Niu, Z Zhu, Y Dong… - Optical Materials …, 2023 - opg.optica.org
In this work, Ge_2Sb_2Te_5 (GST) thin films are irradiated by a 1064 nm pulsed laser heat
treatment system with different beam profiles. The surface effects induced by different laser …
treatment system with different beam profiles. The surface effects induced by different laser …
Impact of Temperature on GST/ITO/Soda-Lime Glass Substrate Thin Film Devices
The substrate temperature of Ge2Sb2Te5 (GST) optoelectronic devices can influence
various physical parameters, which could be helpful for tuning optoelectronic device …
various physical parameters, which could be helpful for tuning optoelectronic device …
Investigations of Atomic Layer Deposition and Thermal Atomic Layer Etching: Nucleation Trends, Area-Selectivity, and Phase Change Memory Materials
H Saare - 2021 - search.proquest.com
Atomic layer deposition (ALD) is a rapidly evolving self-limiting vapor-phase deposition
method, which enables angstrom-level control over the resulting thin film thickness. The …
method, which enables angstrom-level control over the resulting thin film thickness. The …