Improved quality of InSb-on-insulator microstructures by flash annealing into melt
H Menon, L Södergren, R Athle, J Johansson… - …, 2021 - iopscience.iop.org
Monolithic integration of III–V semiconductors with Silicon technology has instigated a wide
range of new possibilities in the semiconductor industry, such as combination of digital …
range of new possibilities in the semiconductor industry, such as combination of digital …
III-V InxGa1-xAs/InP MOS-HEMTs for 100-340ghz Communications Systems
BD Markman - 2020 - search.proquest.com
This work summarizes the efforts made to extend the current gain cutoff frequency of InP
based FET technologies beyond 1 THz. Incorporation of a metal-oxide-semiconductor field …
based FET technologies beyond 1 THz. Incorporation of a metal-oxide-semiconductor field …
Crystal Phase Engineering in III-V Semiconductor Films: From Epitaxy to Devices
P Staudinger - 2020 - infoscience.epfl.ch
Crystal phase engineering is an exciting pathway to enhance the properties of conventional
semiconductors. Metastable SiGe presents a direct band gap well suited for optical devices …
semiconductors. Metastable SiGe presents a direct band gap well suited for optical devices …
GeSi Franz-Keldysh modulator for silicon photonic integrated circuits
L Mastronardi - 2019 - eprints.soton.ac.uk
The growing of Internet has driven recent development of Silicon Photonics in the attempt of
coping with the unceasing demand of bandwidth at cheap cost; datacentres with large …
coping with the unceasing demand of bandwidth at cheap cost; datacentres with large …
III-V In_ {x} Ga_1 {-x} As/InP MOS-HEMTs for 100-340GHz Communications Systems
BD Markman - 2020 - escholarship.org
This work summarizes the efforts made to extend the current gain cutoff frequency of InP
based FET technologies beyond 1 THz. Incorporation of a metal-oxide-semiconductor field …
based FET technologies beyond 1 THz. Incorporation of a metal-oxide-semiconductor field …