The quest for nanoscaling has extended beyond traditional metal oxides (1-4) and metal
(0),(5) as exemplified by the huge development of “quantum dots” chalcogenide …

Fully exploiting the silicon photonics platform for large-volume, cost-sensitive applications
requires a fundamentally new approach to directly integrate high-performance laser sources …

We report on the ultraclean emission from single quantum dots embedded in pure wurtzite
nanowires. Using a two-step growth process combining selective-area and vapor–liquid …

In semiconductor nanowires, the coexistence of wurtzite and zinc-blende phases enables
the engineering of the electronic structure within a single material. This presupposes an …

Phosphide-based nanocrystals (NCs), including InP and Cu3–x P, are relevant for
applications in light-emitting devices and catalysis, yet their synthetic design is limited in …

Thanks to their peculiar shape and dimensions, semiconductor nanowires (NWs) are
emerging as building components of novel devices. The presence of wurtzite (WZ) phase in …

Generation of photon pairs from quantum dots with near-unity entanglement fidelity has
been a long-standing scientific challenge. It is generally thought that the nuclear spins limit …

We have grown InP nanowires doped with hydrogen sulfide, which exhibit sulfur
concentrations of up to 1.4%. The highest doped nanowires show a pure wurtzite crystal …

We report single crystal phase and non-tapered wurtzite (WZ) and zincblende twinning
superlattice (ZB TSL) InP nanowires (NWs). The NWs are grown in a metalorganic vapor …

Semiconductor nanowires based on non-nitride III-V compounds can be synthesized under
certain growth conditions to favor the appearance of the wurtzite crystal phase. Despite …