Abstract 2D semiconductors have emerged both as an ideal platform for fundamental
studies and as promising channel materials in beyond‐silicon field‐effect‐transistors due to …

In this work, monolithic three‐dimensional complementary metal oxide semiconductor
(CMOS) inverter array has been fabricated, based on large‐scale n‐MoS2 and p‐MoTe2 …

Hydrogen gas (H 2) has garnered significant attention as an alternative clean energy
source, and its sensitive detection is essential to prevent explosions due to leakage in …

In the present work, the impact of ZrO2 gate dielectric thickness on the electrical
performance of TiO2 thin film transistors (TFTs) is systematically investigated. Exhaustive …

Molybdenum sulfide (MoS 2) as an emerging optoelectronic material, shows great potential
for phototransistors owing to its atomic thickness, adjustable band gap, and low cost …

We investigated the effects of air annealing on the photoelectric performance of aluminum-
doped zinc oxide (AZO)/Al2O3/Ag/AZO. Transparent conductive films (TCFs) of AZO (55 …

Atomic layer deposition (ALD) is a key technology for fabricating functional layers in
perovskite solar cells, as it can deposit pinhole-free films with atomic-level thickness and …

Here, it is shown that in situ spectroscopic ellipsometry (SE) is a powerful method for probing
the effects of reactant adsorption and film formation on the excitonic properties of 2D …

Due to the large surface to volume ratio of two-dimensional (2D) materials, the electrical
performance of MoS 2 is very sensitive to extrinsic ambient conditions. Post treatments are …

The era of the Internet of Things (IoT) calls for advancements in device level to fulfill the
diversified applications. Titanium dioxide (TiO 2), belongs to the family of metal oxides, has …