The discovery of hydrothermal vents along the Galapagos Rift in 1977 opened up one of the
most dynamic and productive research themes in marine biology. In the intervening 25 …

Light and elevated temperature induced degradation (LeTID) in multicrystalline (mc) silicon
(Si) is known to be sensitive to the silicon nitride (SiN x: H) deposition and the firing, but the …

The use of carbon (C) in SiGe base layers is an important approach to control the base layer
dopant phosphorus (P) diffusion and thus enhance PNP heterojunction bipolar transistor …

This letter reports a point defect injection study of 185 keV 2.3× 10 15 cm− 2 fluorine
implanted silicon. After an inert anneal at 1000 C⁠, fluorine peaks are seen at depths of 0.3 …

In this paper, we discuss the impact of germanium and carbon on the diffusion of common
dopants in Si-based alloys. We review results of various diffusion experiments and discuss …

Vacancy injection is known to occur from the silicon/silicon-nitride interface under conditions
of thermal nitridation and during anneal in inert or oxidizing ambients in the presence of a …

We propose a physically based model that describes the density and size of voids in silicon
introduced via high dose helium ion implantation and subsequent annealing. The model …

The development of silicon-germanium alloys to extend the range of silicon high-frequency
circuits has highlighted the need to understand diffusion mechanisms in this important …

We investigated the thermal nitridation effects on phosphorus (P) diffusion in strained Si 1− x
Ge x and strained Si 1− x Ge x: C y with up to 18% germanium and 0.09% carbon. P …

The aim of this thesis is to investigate three aspects related to phosphorus diffusion for
doping profile control in PNP SiGe HBTs: We systematically and quantitatively investigated …