Neuromorphic Computing in Synthetic Antiferromagnets by Spin‐Orbit Torque Induced Magnetic‐Field‐Free Magnetization Switching

X Han, Z Wang, Y Wang, D Wang… - Advanced Functional …, 2024 - Wiley Online Library
Synthetic antiferromagnet (SAF) with high thermal stability, ultra‐fast spin dynamics, and
highly efficient spin‐orbit torque switching has great application potential in neuromorphic …

Comparative analysis of devices working on optical and spintronic based principle

P Jangra, M Duhan - Journal of Optics, 2024 - Springer
The optical-and spin-based devices have seen tremendous growth over the last decade for
data storage and computation applications. Both technology domains have been used …

Polygon Boolean operations and physical unclonable functions implemented by an Ag-embedded sodium-alginate-based memristor for image encryption/decryption

J Shi, J Han, J Bian, Y Dong, Y Lin, Y Zhang… - Applied Physics …, 2024 - pubs.aip.org
In this work, we demonstrate the coexistence of nonvolatile memory (NVM) and volatile
threshold switching (VTS) behaviors in an Ag-embedded sodium-alginate-based memristor …

Area efficient computing-in-memory architecture using STT/SOT hybrid three level cell

S Dhull, A Nisar, R Bhat… - IEEE Open Journal of …, 2022 - ieeexplore.ieee.org
Spintronic-based computing-in-memory (CiM) architecture has emerged as one of the
efficient solutions to counter the latency/bandwidth bottleneck of conventional von-Neumann …

Modeling of Spin Orbit Torque Driven Domain Wall Device for All-Spin Neural Network

S Dhull, A Nisar, G Verma… - IEEE Transactions on …, 2024 - ieeexplore.ieee.org
Domain wall (DW) devices have emerged as promising candidates for ultrafast and low
power spintronic computing systems. However, the hardware implementation of these …

SIMPLY+: A Reliable STT-MRAM Based Smart Material Implication Architecture For In-Memory Computing

T Moposita, E Garzón, R De Rose, F Crupi… - IEEE …, 2023 - ieeexplore.ieee.org
This paper introduces SIMPLY+, an advanced Spin-Transfer Torque Magnetic Random-
Access Memory (STT-MRAM)-based Logic-in-Memory (LIM) architecture that evolves from …

[HTML][HTML] Exploiting switching properties of non-volatile memory chips for data security applications

S Chakraborty, M Suri - Memories-Materials, Devices, Circuits and Systems, 2023 - Elsevier
This paper presents a technique of utilizing Commercial-Off-The-Self (COTS) Non-Volatile
Memory (NVM) chips for data security applications. In particular, True Random Numbers …

Design of small volume and low power consumption logic gates based on 4-terminal multilevel magnetic cell

N Alimohammadi, Z Alaie - Journal of Magnetism and Magnetic Materials, 2024 - Elsevier
Spintronics is an emerging technology for designing logic circuits. The non-volatile logic
based on the magnetic tunnel junction (MTJ) cell is a suitable solution to overcome the …

Hybrid spintronics/CMOS logic circuits using all-optical-enabled magnetic tunnel junction

SN Dikshit, A Nisar, S Dhull, N Bindal… - IEEE Open Journal of …, 2022 - ieeexplore.ieee.org
Spintronics is one of the emerging fields for next-generation low power, high endurance,
non-volatile, and area efficient memory technology. Spin torque transfer (STT), spin orbit …