Exploiting spin transport increases the functionality of electronic devices and enables such
devices to overcome physical limitations related to speed and power. Utilizing the Rashba …

Current induced spin-orbit torques driven by the conventional spin Hall effect are widely
used to manipulate the magnetization. This approach, however, is nondeterministic and …

Spin-orbit torque magnetic random-access memory (SOT-MRAM) offers promise for fast
operation and high endurance but faces challenges such as low switching current, reliable …

Spin–orbit coupling can convert a charge current into a spin current, thereby generating a
spin–orbit torque (SOT). Energy-efficient, commercially viable SOT technology requires field …

Cubic materials host high crystal symmetry and hence are not expected to support
anisotropy in transport phenomena. In contrast to this common expectation, here we report …

Summary Spin-orbit-torque (SOT)-driven perpendicular magnetization switching has
attracted great attention for designing energy-efficient, high-density, and thermal-stable …

Spin-orbit coupling effect in structures with broken inversion symmetry, known as the
Rashba effect, facilitates spin-orbit torques (SOTs) in heavy metal/ferromagnet/oxide …

Large spin–orbit torques (SOTs) generated by topological materials and heavy metals
interfaced with ferromagnets are promising for next-generation magnetic memory and logic …

Current-induced spin torques enable the electrical control of the magnetization with low
energy consumption. Conventional magnetic random access memory (MRAM) devices rely …

We theoretically demonstrate the spin swapping effect of band structure origin in
centrosymmetric ferromagnets. It is mediated by an orbital degree of freedom but does not …