A critical review of design and fabrication challenges in InP HEMTs for future terahertz frequency applications
This article critically reviews the materials, processing and reliability of InP high electron
mobility transistors (InP HEMTs) for future terahertz wave applications. The factors such as …
mobility transistors (InP HEMTs) for future terahertz wave applications. The factors such as …
A review of III-V Tunnel Field Effect Transistors for future ultra low power digital/analog applications
M Saravanan, E Parthasarathy - Microelectronics Journal, 2021 - Elsevier
Abstract Tunnel Field Effect Transistors (TFETs) have emerged as serious contenders for the
replacement of traditional MOSFET technology for the future ultra low power Analog/Digital …
replacement of traditional MOSFET technology for the future ultra low power Analog/Digital …
GaAs metamorphic high electron mobility transistors for future deep space-biomedical-millitary and communication system applications: A review
Following the introduction of metamorphic high electron mobility transistors (MHEMTs) 30
years back, there has been a rapid growth in their use in advanced MMIC (monolithic …
years back, there has been a rapid growth in their use in advanced MMIC (monolithic …
Enhancement of Johnson figure of merit in III‐V HEMT combined with discrete field plate and AlGaN blocking layer
AS Augustine Fletcher, D Nirmal… - … Journal of RF and …, 2020 - Wiley Online Library
Abstract The performance of AlGaN/GaN HEMT is enhanced by using discrete field plate
(DFP) and AlGaN blocking layer. The AlGaN blocking layer provides an excellent …
(DFP) and AlGaN blocking layer. The AlGaN blocking layer provides an excellent …
Simulation modelling of III‐Nitride/β‐Ga2O3 Nano‐HEMT for microwave and millimetre wave applications
In this piece of work, a recessed gate field‐plated AlGaN/AlN/GaN HEMT on β‐Ga2O3
substrate is proposed and its performance characteristics are compared with HEMT structure …
substrate is proposed and its performance characteristics are compared with HEMT structure …
DC and microwave characteristics of Lg 50 nm T-gate InAlN/AlN/GaN HEMT for future high power RF applications
The DC and microwave characteristics of L g= 50 nm T-gate InAlN/AlN/GaN High Electron
Mobility Transistor (HEMT) on SiC substrate with heavily doped n+ GaN source and drain …
Mobility Transistor (HEMT) on SiC substrate with heavily doped n+ GaN source and drain …
Investigation of breakdown performance in = 20 nm novel asymmetric InP HEMTs for future high-speed high-power applications
In this paper, we investigated the breakdown performance of novel nanoscale asymmetric
InP high-electron-mobility transistors (HEMTs). The novel asymmetric InP HEMT features Γ Γ …
InP high-electron-mobility transistors (HEMTs). The novel asymmetric InP HEMT features Γ Γ …
Investigation of DC-RF and breakdown behaviour in Lg= 20 nm novel asymmetric GaAs MHEMTs for future submillimetre wave applications
J Ajayan, T Ravichandran, P Mohankumar… - … -International Journal of …, 2018 - Elsevier
In this work, we systematically investigated the DC-RF and breakdown voltage
characteristics of L g= 20 nm novel asymmetric GaAs metamorphic high electron mobility …
characteristics of L g= 20 nm novel asymmetric GaAs metamorphic high electron mobility …
20 nm high performance novel MOSHEMT on InP substrate for future high speed low power applications
In this work, the DC and RF performance of a 20 nm gate length novel metal oxide
semiconductor high electron mobility transistor (MOSHEMT) on InP substrate is studied …
semiconductor high electron mobility transistor (MOSHEMT) on InP substrate is studied …
Comparative assessment of InGaAs sub-channel and InAs composite channel double gate (DG)-HEMT for sub-millimeter wave applications
SK Radhakrishnan, B Subramaniyan… - … -International Journal of …, 2018 - Elsevier
This work analyses the impact of channel material, channel thickness (T CH) and gate
length (L g) on the various performance device metrics of Double-gate (DG) High Electron …
length (L g) on the various performance device metrics of Double-gate (DG) High Electron …