Effects of current on nanoscale ring-shaped magnetic tunnel junctions

HX Wei, J He, ZC Wen, XF Han, WS Zhan… - Physical Review B …, 2008 - APS
We report the observation and micromagnetic analysis of current-driven magnetization
switching in nanoscale ring-shaped magnetic tunnel junctions. When the electric current …

Investigation on the magnetization reversal of nanostructured magnetic tunnel junction rings

CC Chen, JY Lin, L Horng, JS Yang… - IEEE transactions on …, 2009 - ieeexplore.ieee.org
Nanostructured magnetic tunnel junction rings (MTJ) based on CoFeB free layer were
fabricated to investigate the corresponding magnetization reversal processes. The …

Magnetoresistance in a lithography defined single constrained domain wall spin-valve

Y Wang, CH de Groot, D Claudio-Gonzalez… - Applied Physics …, 2010 - pubs.aip.org
We have measured domain wall magnetoresistance in a single lithographically constrained
domain wall. An H-shaped Ni nanobridge was fabricated by e-beam lithography with the two …

Current-in-plane magnetoresistance of spin valve elliptical rings

W Jung, FJ Castano, CA Ross - Applied Physics Letters, 2007 - pubs.aip.org
The giant magnetoresistance of Ni Fe∕ Cu∕ Co∕ Ir Mn spin valve elliptical rings with 3.2∕
1.9 μ m major/minor diameter and widths of 340–370 nm has been characterized in a …

Thermal stability of the geometrically constrained magnetic wall and its effect on a domain-wall spin valve

M Sasaki, K Matsushita, J Sato… - Journal of Applied Physics, 2012 - pubs.aip.org
We studied thermal fluctuations in magnetoresistance (MR) signals originating from
geometrically confined magnetic walls (GCMWs) of nanometer size. To this end, we …

Effects of field cooling direction on magnetoresistance of exchange-biased magnetic tunnel junction rings

CC Chen, CY Kuo, L Horng, S Isogami… - Japanese journal of …, 2009 - iopscience.iop.org
We report an effect of field cooling direction on the magnetoresistance of ring-shaped
magnetic tunnel junctions consisting of Ta 5/Cu 20/Ta 5/NiFe 2/Cu 5/MnIr 10/CoFe 4/Al–N …

Magnetoresistance in constrained domain walls

Y Wang - 2013 - eprints.soton.ac.uk
In magnetic materials, domains of magnetic orientation in opposite direction are often
alternated. The transition in orientation between these domains, the domain wall, is not …

Single domain wall magnetoresistance electron-beam fabrication and magnetoresistance measurement

Y Wang, CH de Groot, D Claudio-González… - Spintronics …, 2011 - spiedigitallibrary.org
We report a reproducible top down fabrication procedure for a single domain wall
magnetoresistance H-shaped device. A bi-layer e-beam lift-off process is used and the e …

Magnetic thin film Fe ring structures and devices

Y Hou - 2014 - digital.lib.washington.edu
Magnetic thin film ring structures show distinct magnetic states and highly reproducible
switching behavior, which makes them candidates for multiple magnetoelectronic and …