Structural, optical and morphological properties of hybrid heterostructures on the basis of
GaN grown on compliant substrate por-Si(111) - ScienceDirect Skip to main contentSkip to …

This is the first report of the control of the structural and optical functional characteristics of
integrated GaAs/Si (001) heterostructures due to the use of misoriented Si (001) substrates …

Integrated heterostructures with a nanocolumn morphology of the film In x Ga 1-x N were
grown using the method of molecular beam epitaxy, with plasm activation of nitrogen on a …

This is the first attempt to make a report regarding the control of the structural and optical
functional characteristics of integrated GaAs/Si heterostructures owing to the employment of …

Using X-ray diffraction analysis, atomic force microscopy, IR and UV spectroscopy, the
properties of thin aluminium nitride films (< 200 nm) that were obtained by ion-plasma …

Using the complexes of structural and spectroscopic diagnostic techniques, we investigated
the influence of the layer of nanoporous silicon on the practical implementation and certain …

The work reports on the chloride vapour phase epitaxy growth of a GaN film on the
preliminarily treated silicon substrates of Si (001) with a 3° miscut to (011) through the buffer …

The majority of optoelectronic devices based on porous silicon (PS) display low
luminescence efficiency and luminous deterioration with age. PS is fabricated by …

The aim of this work was the formation of multilayer structures of macroporous silicon and
the study of their structural, morphological, and optical properties in comparison with the …

A new type of virtual (compliant) substrate based on a superstructural AlGaAs layer (SL) and
a layer of protoporous silicon (proto-Si) formed on c-Si was used for the low-temperature …