Ferroelectric and two-dimensional (2D) materials are both heavily investigated classes of
electronic materials. This is unsurprising since they both have superlative fundamental …

The emergence of data-centric applications such as artificial intelligence (AI), machine
learning, and the Internet of Things (IoT), has promoted surges in demand for storage …

This article is written on behalf of many colleagues, collaborators, and researchers in the
field of advanced materials who continue to enable and undertake cutting-edge research in …

Ferroelectricity in doped HfO 2 thin films was reported for the first time 12 years ago,
generating strong interest in the non-volatile memory and logic community. Thanks to their …

Inserting an ultrathin TiN interlayer into a ferroelectric HfZrOx (HZO) film of 10 nm by in situ
ALD was proposed to implement ferroelectric capacitors (FeCAPs) in this work. The FeCAPs …

Hafnium-based ferroelectric memories are a promising approach to enhancing integrated
circuit performance, offering advantages such as miniaturization, compatibility with CMOS …

This chapter provides a brief and concise overview of ferroelectric memories based on the
hafnium-oxide. Ferroelectricity, discovered in Rochelle salt for the first time in 1920 by …

Ferroelectric memories have regained significant interest since the 2010s, following the
discovery of ferroelectricity in hafnium oxide. This breakthrough holds the promise of …

Learning-capable edge artificial intelligence (AI) systems require both inference and
learning capabilities combined with energy efficiency. However, no existing memory …

The emergence of data-centric applications such as artificial intelligence (AI), machine
learning, and the Internet of Things (IoT), has promoted surges in demand for storage …