Microheater: material, design, fabrication, temperature control, and applications—a role in COVID-19
Heating plays a vital role in science, engineering, mining, and space, where heating can be
achieved via electrical, induction, infrared, or microwave radiation. For fast switching and …
achieved via electrical, induction, infrared, or microwave radiation. For fast switching and …
Gallium nitride as an electromechanical material
Gallium nitride (GaN) is a wide bandgap semiconductor material and is the most popular
material after silicon in the semiconductor industry. The prime movers behind this trend are …
material after silicon in the semiconductor industry. The prime movers behind this trend are …
Ion implantation into GaN
SO Kucheyev, JS Williams, SJ Pearton - Materials Science and …, 2001 - Elsevier
The current status of ion beam processing of GaN is reviewed. In particular, we discuss the
following aspects of ion implantation into GaN:(i) damage build-up and amorphization,(ii) …
following aspects of ion implantation into GaN:(i) damage build-up and amorphization,(ii) …
Group III nitride and SiC based MEMS and NEMS: materials properties, technology and applications
V Cimalla, J Pezoldt, O Ambacher - Journal of Physics D: Applied …, 2007 - iopscience.iop.org
With the increasing requirements for microelectromechanical systems (MEMS) regarding
stability, miniaturization and integration, novel materials such as wide band gap …
stability, miniaturization and integration, novel materials such as wide band gap …
Mechanochemical reactions of GaN-Al2O3 interface at the nanoasperity contact: Roles of crystallographic polarity and ambient humidity
Mechanochemical reactions of the GaN-Al 2 O 3 interface offer a novel principle for scientific
and technological merits in the micro-/nano-scale ultra-precision surface machining. In this …
and technological merits in the micro-/nano-scale ultra-precision surface machining. In this …
[HTML][HTML] Interplay between counter-surface chemistry and mechanical activation in mechanochemical removal of N-faced GaN surface in humid ambient
Mechanical activation in mechanical removal of GaN using diamond tip and
mechanochemical removal using Al 2 O 3 tip are described by the Archard equation and …
mechanochemical removal using Al 2 O 3 tip are described by the Archard equation and …
Diameter-dependent electromechanical properties of GaN nanowires
The diameter-dependent Young's modulus, E, and quality factor, Q, of GaN nanowires were
measured using electromechanical resonance analysis in a transmission electron …
measured using electromechanical resonance analysis in a transmission electron …
Review of topside interconnections for wide bandgap power semiconductor packaging
L Wang, W Wang, RJE Hueting… - … on Power Electronics, 2022 - ieeexplore.ieee.org
Due to their superior material properties, wide bandgap (WBG) semiconductors enable the
application of power electronics at higher temperature operation, higher frequencies, and …
application of power electronics at higher temperature operation, higher frequencies, and …
Correlation between hardness and elastic moduli of the covalent crystals
From a statistical manner, we collected and correlated experimental bulk (B), shear (G),
Young's modulus (E), and ductility (G/B) with Vickers hardness (Hv) for a number of covalent …
Young's modulus (E), and ductility (G/B) with Vickers hardness (Hv) for a number of covalent …
GaN‐based epitaxy on silicon: stress measurements
A Krost, A Dadgar, G Strassburger… - physica status solidi …, 2003 - Wiley Online Library
We present an in situ method for the determination of the stress in GaN layers on hetero‐
substrates, in particular Si, via measuring the wafer curvature. For device application it is …
substrates, in particular Si, via measuring the wafer curvature. For device application it is …