Wide Bandgap (WBG) semiconductor materials present promising electrical and thermal
characteristics for Power Electronics applications. These WBG devices make it possible the …

In recent years, there has been a trend for improved performance in semiconductor
switches, allowing power electronic systems to achieve higher efficiency and higher power …

The increasing demand for higher power densities and higher efficiencies in power
electronics, driven by the aerospace, electric vehicle, and renewable energy industries …

This letter presents and evaluates three accurate (20%) calorimetric switching loss
measurement methods, which are capable of measuring hard-and soft-switching losses at …

This work combines a 99.2% efficient gallium nitride (GaN)-based low-voltage fast-switching
half-bridge converter with an Si-based high-voltage slow-switching and almost lossless …

With the advent of WBG device like GaN and SiC, frequency has been pushed to very high
in order to achieve the higher power density. Consequently, switching loss becomes a large …

Modern GaN and SiC power semiconductors require new experimental methods for
determining switching losses as the widely accepted double-pulse-test (DPT) fails to …

An accurate measurement of conduction and switching losses in the power semiconductor
devices is necessary in order to design and evaluate the thermal management system of …

In this paper, the merits of a high-frequency resonant converter for supplying dielectric
barrier discharges (DBD) devices are established. It is shown that, thanks to its high …

With the recent development and availability of wide bandgap devices in the market, more
and more power converters are being designed with such devices. Given their fast …