Infrared detection and imaging are key enabling technologies for a vast number of
applications, ranging from communication, to medicine and astronomy, and have recently …

Silicon photomultipliers (SiPMs) offer advantages such as lower relative cost, smaller size,
and lower operating voltages compared to photomultiplier tubes. A SiPM's readout circuit …

Voltage drift over time in charge amplifiers is a problem not fully solved yet for DC
measurements and continues to be a challenge for the scientific community. In this study we …

In this paper we present a recording stage dedicated to time-based measurements required
in imaging detectors. The prototype ASIC is manufactured in the 28 nm CMOS process and …

We present a multichannel integrated circuit of pixel architecture designed in CMOS 40 nm
technology. The chip is composed of 40× 24 pixels of 75 µm pitch working in the single …

The paper describes a design of a prototype chip in 28 nm CMOS technology, consisting of
8× 4 pixels with 50 μm pitch, dedicated for the precise measurement of Time-of-Arrival (ToA) …

In this article, we present a front-end amplifier that is equipped with a precise, fast, and
automated reset circuit responsible for two actions: restoring the charge-sensitive amplifier …

This paper presents the design and characteristics of a front-end readout system for silicon
sensors used in nuclear spectroscopy studies. Furthermore, the study proposes circuit …

The front-end readout channel consists of a charge sensitive amplifier (CSA) and two
different unipolar-shaping circuits to generate pulses suitable for time and energy …

In this paper, equations for signal processing and noise analysis were derived for a realistic
radiation detector model, and simulations were performed under various conditions …