Over the past decade, the primary focus for improving the performance of nano-electronic
metal interconnect structures has been to reduce the impact of resistance-capacitance (RC) …

Die singulation, also known as wafer dicing, is reviewed in terms of the brief history, critical
challenges, characterization of singulation quality, different singulation technologies and …

All engineers could benefit from at least one course in Reliability Physics & Engineering. It is
very likely that, starting with your very first engineering position, you will be asked—how long …

As demand for lower power and higher performance nano-electronic products increases, the
semiconductor industry must adopt insulating materials with progressively lower dielectric …

Ultrathin silicon wafer technology is reviewed in terms of the semiconductor applications,
critical challenges, and wafer pre-assembly and assembly process technologies and their …

This paper describes a framework to study the initiation and arrest of an interfacial crack,
using a combination of experiment and computation. We consider a test configuration widely …

Back end of the line dielectrics (BEOL) with low dielectric constants, so called low-k
dielectrics, are needed for current and future integrated circuit technology nodes. However …

Continued reduction in resistance-capacitance (RC) delays in nano-electronic Cu
interconnect structures will require new materials with increasingly lower dielectric constants …

We describe a three-dimensional (3D) finite element analysis model of the contact between
an atomic force microscopy (AFM) tip and a substrate with finite size subsurface structures …

Integrating nanometre sized pores into hybrid organic-inorganic interconnect layers is one of
the key approaches being undertaken by the semiconductor industry to sustain the …