A review of self-heating effects in advanced CMOS technologies

C Prasad - IEEE Transactions on Electron Devices, 2019 - ieeexplore.ieee.org
The march toward dimensional scaling and higher performance has led the semiconductor
industry to consider nonplanar topologies and different material systems. These choices …

A review of hot carrier degradation in n-channel MOSFETs—Part I: Physical mechanism

S Mahapatra, U Sharma - IEEE Transactions on Electron …, 2020 - ieeexplore.ieee.org
Transistor parametric drift due to conductionmode hot carrier degradation (HCD) in n-
MOSFETs is reviewed, for longand short-channel length (LCH) devices having different …

Intrinsic transistor reliability improvements from 22nm tri-gate technology

S Ramey, A Ashutosh, C Auth, J Clifford… - 2013 IEEE …, 2013 - ieeexplore.ieee.org
This paper highlights the intrinsic reliability capabilities of Intel's 22nm process technology,
which introduced the tri-gate transistor architecture and features a 3 rd generation high …

Self-heating effect in FDSOI transistors down to cryogenic operation at 4.2 K

K Triantopoulos, M Cassé, S Barraud… - … on Electron Devices, 2019 - ieeexplore.ieee.org
Self-heating in fully depleted silicon-oninsulator (FDSOI) metal-oxide-semiconductor field-
effect transistors (MOSFETs) is experimentally studied using the gate resistance …

Self-heating effect in FinFETs and its impact on devices reliability characterization

SE Liu, JS Wang, YR Lu, DS Huang… - 2014 IEEE …, 2014 - ieeexplore.ieee.org
The impact of self-heating effect (SHE) on device reliability characterization, such as BTI,
HCI, and TDDB, is extensively examined in this work. Self-heating effect and its impact on …

Understanding the Effects of Permanent Faults in GPU's Parallelism Management and Control Units

JD Guerrero Balaguera, JE Rodriguez Condia… - Proceedings of the …, 2023 - dl.acm.org
Modern Graphics Processing Units (GPUs) demand life expectancy extended to many years,
exposing the hardware to aging (ie, permanent faults arising after the end-of-manufacturing …

A device-to-system perspective regarding self-heating enhanced hot carrier degradation in modern field-effect transistors: A topical review

MA Alam, BK Mahajan, YP Chen, W Ahn… - … on Electron Devices, 2019 - ieeexplore.ieee.org
As foreseen by Keyes in the late 1960s, the self-heating effect has emerged as an important
concern for device performance, output power density, run-time variability, and reliability of …

Direct observation of self-heating in III–V gate-all-around nanowire MOSFETs

SH Shin, MA Wahab, M Masuduzzaman… - … on Electron Devices, 2015 - ieeexplore.ieee.org
Gate-all-around (GAA) MOSFETs use multiple nanowires (NWs) to achieve target, along
with excellent 3-D electrostatic control of the channel. Although the self-heating effect has …

Hot carrier reliability characterization in consideration of self-heating in FinFET technology

M Jin, C Liu, J Kim, J Kim, S Choo, Y Kim… - 2016 IEEE …, 2016 - ieeexplore.ieee.org
A severity of hot carrier injection (HCI) in PFET becomes worse than NFET at elevated
temperatures. This new observation is further found to be due to the coupled self-heating …

Self-heating in advanced CMOS technologies

C Prasad, S Ramey, L Jiang - 2017 IEEE International …, 2017 - ieeexplore.ieee.org
On advanced technology nodes, increases in power density, non-planar architectures and
different material systems can exacerbate local self-heating due to active power dissipation …