The threshold voltage value, which is the most important electrical parameter in modeling
MOSFETs, can be extracted from either measured drain current or capacitance …

This article presents an up-to-date review of the several extraction methods commonly used
to determine the value of the threshold voltage of MOSFETs. It includes the different methods …

High mobility, electrolyte-gated FETs (EGFETs), based on precursor-derived oxide
semiconductors, enable the possibility of achieving printed and low voltage (<; 2 V) operated …

The constant-current (CC) method uses a current criterion to determine the threshold voltage
(V TH) of metal-oxide-semiconductor (MOS) field-effect transistors. We show that using the …

We examine the role of the density of states in determining the performance of amorphous
organic devices. Specifically we compare the exponential density of states and the Gaussian …

We report effects for up to 100 Mrad (SiO 2) gamma-ray exposure on polycrystalline ZnO thin
film transistors (TFTs) deposited by two different techniques. The radiation related TFT …

As scaling becomes increasingly difficult, there is growing interest in vertical or three-
dimensional stacking of transistors and especially memory. Ferroelectric semiconductor field …

This article proposes two possible extrapolation-type methods to extract the threshold
voltage of Tunnel Field Effect Transistors (TFETs). The first one, which we call the “CTR …

A method is presented to extract the series resistance, the threshold voltage, and the
mobility enhancement factor of thin-film MOSFETs. This integration-based method, which …

Organic transistors with high on-state drain current at gate and drain voltages of− 2 V
fabricated on polyethylene naphthalate foils were investigated for sensor development. Two …