Ultrawide-bandgap semiconductor AlN crystals: growth and applications
R Yu, G Liu, G Wang, C Chen, M Xu, H Zhou… - Journal of Materials …, 2021 - pubs.rsc.org
In recent years, ultrawide bandgap semiconductor materials represented by aluminum
nitride (AlN) have attracted worldwide attention due to their excellent high-frequency power …
nitride (AlN) have attracted worldwide attention due to their excellent high-frequency power …
A 271.8 nm deep-ultraviolet laser diode for room temperature operation
Z Zhang, M Kushimoto, T Sakai… - Applied Physics …, 2019 - iopscience.iop.org
We present a deep-ultraviolet semiconductor laser diode that operates under current
injection at room temperature and at a very short wavelength. The laser structure was grown …
injection at room temperature and at a very short wavelength. The laser structure was grown …
Status of the growth and fabrication of AlGaN-based UV laser diodes for near and mid-UV wavelength
In this article, the development of mid-UV laser diodes based on the AlGaN materials system
is reviewed. The targeted wavelength for these lasers covers the range from 200 to 350 nm …
is reviewed. The targeted wavelength for these lasers covers the range from 200 to 350 nm …
Aluminum nitride nanowire light emitting diodes: Breaking the fundamental bottleneck of deep ultraviolet light sources
Despite broad interest in aluminum gallium nitride (AlGaN) optoelectronic devices for deep
ultraviolet (DUV) applications, the performance of conventional Al (Ga) N planar devices …
ultraviolet (DUV) applications, the performance of conventional Al (Ga) N planar devices …
Continuous-wave lasing of AlGaN-based ultraviolet laser diode at 274.8 nm by current injection
Z Zhang, M Kushimoto, A Yoshikawa… - Applied Physics …, 2022 - iopscience.iop.org
We demonstrated continuous-wave lasing of an AlGaN-based ultraviolet laser diode,
fabricated on a single-crystal AlN substrate when operating at 5 C. The threshold current …
fabricated on a single-crystal AlN substrate when operating at 5 C. The threshold current …
Review of nanophotonics approaches using nanostructures and nanofabrication for III-nitrides ultraviolet-photonic devices
Group III-nitride semiconductor materials especially AlGaN are key-emerging candidates for
the advancement of ultraviolet (UV) photonic devices. Numerous nanophotonics …
the advancement of ultraviolet (UV) photonic devices. Numerous nanophotonics …
An electrically pumped 239 nm AlGaN nanowire laser operating at room temperature
In this work, we report on the demonstration of an electrically injected AlGaN nanowire laser
operating at 239 nm at room temperature. Vertically aligned Al-rich AlGaN nanowires are …
operating at 239 nm at room temperature. Vertically aligned Al-rich AlGaN nanowires are …
[HTML][HTML] Low-threshold stimulated emission at 249 nm and 256 nm from AlGaN-based multiple-quantum-well lasers grown on sapphire substrates
Optically pumped deep-ultraviolet (DUV) lasing with low threshold was demonstrated from
AlGaN-based multiple-quantum-well (MQW) heterostructures grown on sapphire substrates …
AlGaN-based multiple-quantum-well (MQW) heterostructures grown on sapphire substrates …
Polynomial chaos expansion of random coefficients and the solution of stochastic partial differential equations in the tensor train format
We apply the tensor train (TT) decomposition to construct the tensor product polynomial
chaos expansion (PCE) of a random field, to solve the stochastic elliptic diffusion PDE with …
chaos expansion (PCE) of a random field, to solve the stochastic elliptic diffusion PDE with …
Recent progress of electrically pumped AlGaN diode lasers in the UV-B and-C bands
The development of electrically pumped semiconductor diode lasers emitting at the
ultraviolet (UV)-B and-C spectral bands has been an active area of research over the past …
ultraviolet (UV)-B and-C spectral bands has been an active area of research over the past …