GaN technology is not only gaining traction in power and RF electronics but is also rapidly
expanding into other application areas including digital and quantum computing electronics …

The rapid development of the computational methods based on density functional theory, on
the one hand, and of time-, energy-, and momentum-resolved spectroscopy, on the other …

The three volumes of this handbook treat the fundamentals, technology and nanotechnology
of nitride semiconductors with an extraordinary clarity and depth. They present all the …

High field electron and hole transport in wurtzite phase GaN is studied using an ensemble
Monte Carlo method. The model includes the details of the full band structure derived from …

In highly polar semiconductors with electron densities typically found in heterostructure field-
effect transistors (HFETs), transport cannot be described without taking hot phonons into …

We study the performance of GaN nanowire n-MOSFETs (GaN-NW-nFETs) with a channel
length, Lg= 5 nm based on fully ballistic quantum transport simulations. Our simulation …

In recent years, tremendous efforts have been dedicated to GaN high electron mobility
transistors (HEMTs) for high-power and high-frequency applications. In general, the …

In this work, a hybrid simulation technique is introduced for the electrothermal study of a two-
dimensional GaN-on-SiC high electron mobility transistor. Detailed electron and phonon …

Organic thermoelectric (TE) materials provide a brand new perspective to search for high-
efficiency TE materials, due to their low thermal conductivity. The overlap of pz orbitals …

Detailed impact ionization (II) analysis of electrons is presented for AlGaN alloys as a vital
resource for solar-blind avalanche photodiode and high power transistor applications …