The semiconductor ZnO has gained substantial interest in the research community in part
because of its large exciton binding energy (60 meV) which could lead to lasing action …

In this article the doping of the oxidic compound semiconductor ZnO is reviewed with special
emphasis on n-type doping. ZnO naturally exhibits n-type conductivity, which is used in the …

Bottom-gate-type thin film transistors using ZnO as an active channel layer (ZnO–TFT) have
been constructed. The ZnO layers were deposited using pulsed laser deposition at 450° C at …

Whenever a compound crystal is cut normal to a randomly chosen direction, there is an
overwhelming probability that the resulting surface corresponds to a polar termination and is …

The p–n junction was invented in the first half of the twentieth century and the latter half saw
the birth of light emitting diodes: red and yellow/green in the 1960s and yellow in the 1970s …

We have investigated the structural and optical properties of Ga-doped ZnO films grown on
GaN templates by plasma-assisted molecular-beam epitaxy. The carrier concentration in Ga …

We report the analysis of the Urbach effect in the absorption spectra of the undoped ZnO thin
films. The absorption coefficients of the ZnO thin films show the exponential rise, also known …

Wannier-Mott excitons in the wurzite-type semiconductor material ZnO are stable at room
temperature, have an extremely large oscillator strength, and emit blue light. This makes …

The polar nature of the wurtzite crystalline structure of GaN and ZnO results in the existence
of a spontaneous electric polarization within these materials and their associated alloys (Ga …

High-quality ZnO rods were formed directly on sapphire (0001) substrates by metalorganic
chemical vapor deposition. The rods exhibited free exciton and very sharp bound exciton …