Photonic integration opens the potential to reduce size, power, and cost of applications
normally relegated to table-and rack-sized systems. Today, a wide range of precision, high …

One of the main challenges in the development of wide bandgap semiconductor devices is
to understand the behavior of defects and avoid their harm. Using density-functional theory …

The observation of a stimulated emission at interband transitions in monocrystalline n-InN
layers under optical pumping is reported. The spectral position of the stimulated emission …

In this work, the optical gain engineering of an ultra-broadband InGaAs/AlAs solution-
processed quantum dot (QD) semiconductor optical amplifier using superimposed quantum …

Semiconductor heterostructures based on layered two-dimensional transition metal
dichalcogenides (TMDs) interfaced to gallium nitride (GaN) are excellent material systems to …

In this study, the Aluminium Nitride/Gallium Nitride (AlN/GaN) layers and Aluminium
Nitride/Aluminium Gallium Nitride/Gallium Nitride (AlN/AlGaN/GaN) layer heterostructures …

BAlN, an ultra-wide bandgap semiconductor, has attracted the interest of many due to its
potential in high-power electronics and high-efficiency optoelectronics. However, the solid …

A 200 nm thick AlN layer is fabricated by Hydride Vapor Phase Epitaxial (HVPE) technique
onto the n-type Silicon< 111> wafer. After epitaxial growth the AlN is masked and 100 nm …

In this paper, an approach is proposed for an ultra-broadband quantum dot (QD) reflective
semiconductor optical amplifier using superimposed QDs with switching and band selection …

An approach has been suggested for the simulation of a quantum dot reflective
semiconductor optical amplifier (RSOA) with wideband optical gain. This model is …