In our environment, the large availability of wasted heat has motivated the search for
methods to harvest heat. As a reliable way to supply energy, SiGe has been used for …

In this work, implementations of silicon-based thermoelectric nanomaterials are reviewed.
Approaches ranging from nanostructured bulk—ie, macroscopic materials presenting …

Abstract 1D semiconductor core–shell wire heterostructures are crucial for high‐
performance optical and optoelectronic device applications, but they are limited to the …

We have studied the parallel and perpendicular electric field effects on the system of SiGe
prolate and oblate quantum dots numerically, taking into account the wetting layer and …

We demonstrate the ability to fabricate vertically stacked Si quantum dots (QDs) within SiGe
nanowires with QD diameters down to 2 nm. These QDs are formed during high-temperature …

Vertical junctionless gate-all-around nanowire transistors show excellent electrical
performance and can be fabricated using a top-down approach in conventional CMOS …

All-dielectric photonics is a rapidly developing field of optics and material science. The main
interest at visible and near-infrared frequencies is light management using high-refractive …

Advances in the fabrication and characterization of nanowires polytypes have made crystal
phase engineering a well-established tool to tailor material properties. In this review, recent …

Strained epitaxial SiGe on vicinal Si (001) substrates develops a morphological instability
perpendicular to the steps unlike the usual growth instabilities on vicinal substrates …

Realizing a tubular conduction channel within a one-dimensional core–shell nanowire (NW)
enables better understanding of quantum phenomena and exploration of electronic device …