Heat and fluid flow in high-power LED packaging and applications

X Luo, R Hu, S Liu, K Wang - Progress in Energy and Combustion Science, 2016 - Elsevier
Light-emitting diodes (LEDs) are widely used in our daily lives. Both light and heat are
generated from LED chips and then transmitted or conducted through multiple packaging …

Efficiency droop in light‐emitting diodes: Challenges and countermeasures

J Cho, EF Schubert, JK Kim - Laser & Photonics Reviews, 2013 - Wiley Online Library
Efficiency droop, ie the loss of efficiency at high operating current, afflicts nitride‐based light‐
emitting diodes (LEDs). The droop phenomenon is currently the subject of intense research …

Semipolar GaN grown on foreign substrates: a review

F Scholz - Semiconductor Science and technology, 2012 - iopscience.iop.org
Non-and semipolar GaN-based optoelectronic device structures have attracted much
attention in recent years. Best results have been obtained on small bulk substrates cut from …

Catalyst‐free GaN nanorods synthesized by selective area growth

YT Lin, TW Yeh, Y Nakajima… - Advanced Functional …, 2014 - Wiley Online Library
GaN nanorod formation on Ga‐polar GaN by continuous mode metalorganic chemical vapor
deposition selective area growth (MOCVD SAG) is achieved under a relatively Ga‐rich …

GHz bandwidth semipolar (112 2) InGaN/GaN light-emitting diodes

DV Dinh, Z Quan, B Roycroft, PJ Parbrook, B Corbett - Optics letters, 2016 - opg.optica.org
We report on the electrical-to-optical modulation bandwidths of non-mesa-etched semipolar
(112¯ 2) InGaN/GaN light-emitting diodes (LEDs) operating at 430–450 nm grown on high …

[PDF][PDF] (101)面InGaN量子阱中的静电场反转对蓝光发光二极管光电性能的影响

尹瑞梅, 贾伟, 董海亮, 贾志刚, 李天保, 余春燕… - Acta Optica …, 2022 - researching.cn
(10 11)面InGaN量子阱中的静电场反转对蓝光发光二极管光电性能的影响 Page 1 第42 卷第21
期/2022 年11 月/光学学报 2125001-1 研究论文 (10 - 11)面InGaN量子阱中的静电场反转对蓝光 …

Tailoring the morphology and luminescence of GaN/InGaN core–shell nanowires using bottom-up selective-area epitaxy

M Nami, RF Eller, S Okur… - …, 2016 - iopscience.iop.org
Controlled bottom-up selective-area epitaxy (SAE) is used to tailor the morphology and
photoluminescence properties of GaN/InGaN core–shell nanowire arrays. The nanowires …

Effect of quantum barrier thickness in the multiple-quantum-well active region of GaInN/GaN light-emitting diodes

GB Lin, DY Kim, Q Shan, J Cho… - IEEE Photonics …, 2013 - ieeexplore.ieee.org
The dependence of the polarization-induced electric field in GaInN/GaN multiple-quantum-
well light-emitting diodes (LEDs) on the GaN quantum barrier (QB) thickness is investigated …

GaN-based multiquantum well light-emitting diodes with tunnel-junction-cascaded active regions

SJ Chang, WH Lin, CT Yu - IEEE Electron Device Letters, 2015 - ieeexplore.ieee.org
We report the fabrication of GaN-based multiquantum well light-emitting diode (LED) with
tunnel-junction (TJ)-cascaded active region. It was found from X-ray diffraction spectra that …

[HTML][HTML] Interplay between Auger recombination, carrier leakage, and polarization in InGaAlN multiple-quantum-well light-emitting diodes

YC Tsai, C Bayram, JP Leburton - Journal of Applied Physics, 2022 - pubs.aip.org
In conventional hexagonal InGaAlN multiple-quantum-well (MQW)(h-) light-emitting diodes
(LEDs), carrier leakage from QWs is the main source of internal quantum efficiency (IQE) …