Efficiency droop, ie the loss of efficiency at high operating current, afflicts nitride‐based light‐ emitting diodes (LEDs). The droop phenomenon is currently the subject of intense research …
F Scholz - Semiconductor Science and technology, 2012 - iopscience.iop.org
Non-and semipolar GaN-based optoelectronic device structures have attracted much attention in recent years. Best results have been obtained on small bulk substrates cut from …
GaN nanorod formation on Ga‐polar GaN by continuous mode metalorganic chemical vapor deposition selective area growth (MOCVD SAG) is achieved under a relatively Ga‐rich …
We report on the electrical-to-optical modulation bandwidths of non-mesa-etched semipolar (112¯ 2) InGaN/GaN light-emitting diodes (LEDs) operating at 430–450 nm grown on high …
M Nami, RF Eller, S Okur… - …, 2016 - iopscience.iop.org
Controlled bottom-up selective-area epitaxy (SAE) is used to tailor the morphology and photoluminescence properties of GaN/InGaN core–shell nanowire arrays. The nanowires …
GB Lin, DY Kim, Q Shan, J Cho… - IEEE Photonics …, 2013 - ieeexplore.ieee.org
The dependence of the polarization-induced electric field in GaInN/GaN multiple-quantum- well light-emitting diodes (LEDs) on the GaN quantum barrier (QB) thickness is investigated …
We report the fabrication of GaN-based multiquantum well light-emitting diode (LED) with tunnel-junction (TJ)-cascaded active region. It was found from X-ray diffraction spectra that …
In conventional hexagonal InGaAlN multiple-quantum-well (MQW)(h-) light-emitting diodes (LEDs), carrier leakage from QWs is the main source of internal quantum efficiency (IQE) …