The role of power device technology in the electric vehicle powertrain

E Robles, A Matallana, I Aretxabaleta… - … Journal of Energy …, 2022 - Wiley Online Library
In the automotive industry, the design and implementation of power converters and
especially inverters, are at a turning point. Silicon (Si) IGBTs are at present the most widely …

Defect inspection techniques in SiC

PC Chen, WC Miao, T Ahmed, YY Pan, CL Lin… - Nanoscale Research …, 2022 - Springer
With the increasing demand of silicon carbide (SiC) power devices that outperform the
silicon-based devices, high cost and low yield of SiC manufacturing process are the most …

Junction temperature estimation of a SiC MOSFET module for 800V high-voltage application in electric vehicles

Z Shuai, S He, Y Xue, Y Zheng, J Gai, Y Li, G Li, J Li - Etransportation, 2023 - Elsevier
Abstract Silicon Carbide (SiC) power devices have significant advantages on power density
and energy efficiency, and are widely accepted as promising solutions for future electric …

[HTML][HTML] Failure mechanisms of the bonded interface between mold epoxy and metal substrate exposed to high temperature

S Zhao, C Chen, M Haga, M Ueshima… - Composites Part B …, 2023 - Elsevier
The fast development of electric vehicles promoted the development of next-generation
power modules. Along with this trend, the encapsulation techniques are also transforming …

[HTML][HTML] Macroscale and microscale structural mechanisms capable of delaying the fracture of low-temperature and rapid pressureless Ag sintered electronics …

D Kim, MS Kim - Materials Characterization, 2023 - Elsevier
This study focuses on the realization of rapid Ag sintering in 10 minutes under various
temperature conditions without pressure in the air. In each temperature range from 175° C to …

Power cycling tests under driving ΔTj= 125° C on the Cu clip bonded EV power module

D Kim, B Lee, TI Lee, S Noh, C Choe, S Park… - Microelectronics …, 2022 - Elsevier
This study investigated the power cycling performance on a transfer-molded power module
with Cu clip bonding for the next-generation green automotive applications. A 700 V/900A …

Effect of the N-doping concentration on the formation of the wide carrot defect in 4H-SiC homoepitaxial layer grown by trichlorosilane (TCS) as silicon precursor

N Gu, J Yang, H Song - Materials Science in Semiconductor Processing, 2025 - Elsevier
The effect of epilayer growth system, growth rate and N-doping concentration on the
formation of the wide carrot defects in 4H-SiC homoepitaxial layer was investigated in this …

New modulation technique to mitigate common mode voltage effects in star-connected five-phase AC drives

M Fernandez, A Sierra-Gonzalez, E Robles… - Energies, 2020 - mdpi.com
Star-connected multiphase AC drives are being considered for electromovility applications
such as electromechanical actuators (EMA), where high power density and fault tolerance is …

[HTML][HTML] Novel electric arc current emulation system for low-voltage grids

A Davila, A Otero, E Planas, JA Cortajarena… - Engineering Science and …, 2024 - Elsevier
An electric arc is a common distribution grid error, even more so with the use of electric
vehicles and renewable energy sources that increase the likelihood of grid errors. Several …

Three-Dimensional Nondestructive Characterization of Extrinsic Frank-Type Stacking Faults in 4H-SiC Crystals

M Wang, M Wei, Y Li, Y Li, Q Li, H Li… - Crystal Growth & …, 2024 - ACS Publications
The luminescence detection technique is one of the most commonly used NDT techniques
for detecting stacking faults in 4H-SiC crystals. Commonly used detection methods, such as …