A device-to-system perspective regarding self-heating enhanced hot carrier degradation in modern field-effect transistors: A topical review
As foreseen by Keyes in the late 1960s, the self-heating effect has emerged as an important
concern for device performance, output power density, run-time variability, and reliability of …
concern for device performance, output power density, run-time variability, and reliability of …
Improvement in self-heating characteristic by incorporating hetero-gate-dielectric in gate-all-around MOSFETs
For improving self-heating effects (SHEs) in gate-all-around metal-oxide-semiconductor field-
effect transistors (GAA MOSFETs), hetero-gate-dielectric (HGD) is utilized. The HGD consists …
effect transistors (GAA MOSFETs), hetero-gate-dielectric (HGD) is utilized. The HGD consists …
The impact of self-heating on HCI reliability in high-performance digital circuits
While many groups attribute the greatly accelerated (ie, excess) HCI degradation in modern
transistors to the difference between the peak temperature and the average temperature (ΔT …
transistors to the difference between the peak temperature and the average temperature (ΔT …
Integrated modeling of self-heating of confined geometry (FinFET, NWFET, and NSHFET) transistors and its implications for the reliability of sub-20 nm modern …
The evolution of transistor topology from planar to confined geometry transistors (ie, FinFET,
Nanowire FET, Nanosheet FET) has met the desired performance specification of sub-20 nm …
Nanowire FET, Nanosheet FET) has met the desired performance specification of sub-20 nm …
Self-heating mitigation of TreeFETs by interbridges
CJ Tsen, CC Chung, CW Liu - IEEE Transactions on Electron …, 2022 - ieeexplore.ieee.org
Adding interbridges (IBs) as additional channels between nanosheets (NSs) can reduce not
only the maximum temperature in local hotspot of device but also the junction temperature …
only the maximum temperature in local hotspot of device but also the junction temperature …
Investigation of self-heating effects in gate-all-around MOSFETs with vertically stacked multiple silicon nanowire channels
The self-heating effects (SHEs) in gate-all-around (GAA) MOSFETs with vertically stacked
silicon nanowire (SiNW) channels are investigated. Direct observations using thermal …
silicon nanowire (SiNW) channels are investigated. Direct observations using thermal …
A novel TCAD-based thermal extraction approach for nanoscale FinFETs
Self-heating and thermal modeling in fin-shaped FETs (FinFETs) are studied in this brief
using calibrated 3-D TCAD simulations. Using the second order R th C th network extraction …
using calibrated 3-D TCAD simulations. Using the second order R th C th network extraction …
High-sensitivity waveguide-integrated bolometer based on free-carrier absorption for Si photonic sensors
Conventional photon detectors necessarily face critical challenges regarding strong
wavelength-selective response and narrow spectral bandwidth, which are undesirable for …
wavelength-selective response and narrow spectral bandwidth, which are undesirable for …
A predictive model for IC self-heating based on effective medium and image charge theories and its implications for interconnect and transistor reliability
Spatially resolved precise prediction of local temperature T (x, y, z) is essential to evaluate
Arrhenius-activated interconnect (eg, electromigration) and transistor reliability (eg, NBTI …
Arrhenius-activated interconnect (eg, electromigration) and transistor reliability (eg, NBTI …
Thermal SPICE modeling of FinFET and BEOL considering frequency-dependent transient response, 3-D heat flow, boundary/alloy scattering, and interfacial thermal …
CC Chung, HH Lin, WK Wan… - IEEE Transactions on …, 2019 - ieeexplore.ieee.org
High device density and high power density intensify the self-heating effect in scaled FinFET
circuits to degrade both device and back-end-of-line (BEOL) reliability. The boundary …
circuits to degrade both device and back-end-of-line (BEOL) reliability. The boundary …