Strained layer quantum well heterostructure lasers
JJ Coleman - International Technical Digest on Electron …, 1990 - ieeexplore.ieee.org
The metallurgical aspects of critical thickness in strained layer heterostructure systems, the
effects of strain and quantum size effect on emission wavelength, and optical gain and …
effects of strain and quantum size effect on emission wavelength, and optical gain and …
High‐power operation of strained InGaAs/AlGaAs single quantum well lasers
A Moser, A Oosenbrug, EE Latta, T Forster… - Applied physics …, 1991 - pubs.aip.org
The high‐power integrity of strained single quantum well InGaAs/AlGaAs lasers grown by
molecular beam epitaxy is investigated. In the high‐power regime, the lifetime of the L z= 7 …
molecular beam epitaxy is investigated. In the high‐power regime, the lifetime of the L z= 7 …
Lateral patterning of quantum well heterostructures by growth on nonplanar substrates
E Kapon - semiconductors and semimetals, 1994 - Elsevier
Publisher Summary Two-and three-dimensional patterning of semiconductor
heterostructures via epitaxial growth on nonplanar NP substrates offers a number of unique …
heterostructures via epitaxial growth on nonplanar NP substrates offers a number of unique …
Theory of operation of the quantum‐well injection laser without k selection
GW Taylor - Journal of applied physics, 1991 - pubs.aip.org
The quantum-well laser is described in terms of the appropriate quasi-Fermi levels and
Einstein coefficient for stimulated emission. Emission frequencies, thresholds currents …
Einstein coefficient for stimulated emission. Emission frequencies, thresholds currents …
Reduced lateral carrier diffusion for improved miniature semiconductor lasers
TA Strand, BJ Thibeault, LA Coldren - Journal of applied physics, 1997 - pubs.aip.org
The desire to fabricate very small semiconductor lasers requires that we address problems
associated with surface recombination. We have proposed and demonstrated a segmented …
associated with surface recombination. We have proposed and demonstrated a segmented …
Evolution of 3D growth patterns on nonplanar substrates
E Böckenhoff, H Benisty - Journal of crystal growth, 1991 - Elsevier
The specific faceting behavior of gallium arsenide grown by molecular beam epitaxy (MBE)
on dry-etched patterned substrates is investigated on a micronic and submicronic scale. In …
on dry-etched patterned substrates is investigated on a micronic and submicronic scale. In …
Transform-limited picosecond optical pulses from a mode-locked InGaAs/AlGaAs QW laser with integrated passive waveguide cavity and QW modulator
LR Brovelli, R Germann, JP Reithmaier… - IEEE photonics …, 1993 - ieeexplore.ieee.org
Using a novel single-top molecular beam epitaxy growth technology on nonplanar
substrates, an InGaAs/AlGaAs laser amplifier has been integrated with a 4-mm-long passive …
substrates, an InGaAs/AlGaAs laser amplifier has been integrated with a 4-mm-long passive …
Indium migration and controlled lateral bandgap variations in high-power strained layer InGaAs-AlGaAs lasers grown on nonplanar substrates
LR Brovelli, DJ Arent, H Jaeckel, HP Meier - IEEE Journal of Quantum …, 1991 - osti.gov
Strained single quantum well InGaAs-AlGaAs graded-index separate confinement
heterostructure lasers have been grown by molecular beam epitaxy over nonplanar (100) …
heterostructure lasers have been grown by molecular beam epitaxy over nonplanar (100) …
Single-quantum-well strained-layer InGaAs-InGaAsP lasers for the wavelength range from 1.43 to 1.55 mu m
KY Liou, AG Dentai, EC Burrows… - IEEE Photonics …, 1991 - ieeexplore.ieee.org
Strained-layer single-quantum-well InGaAs-InGaAsP lasers have been fabricated using a
novel self-aligned-contact ridge guide structure. The lasers operate with index-guided …
novel self-aligned-contact ridge guide structure. The lasers operate with index-guided …
Compositional variations in InGaAsP films grown on patterned substrates
CA Mullan, GC Weatherly, DA Thompson - Journal of crystal growth, 1997 - Elsevier
A comparison of the growth behaviour of lattice-matched In0. 53 Ga0. 47 As and In0. 74
Ga0. 26 As0. 59P0. 41 films on InP substrates, patterned as diffraction gratings, has been …
Ga0. 26 As0. 59P0. 41 films on InP substrates, patterned as diffraction gratings, has been …