Atomic layer deposition (ALD) is an ideal technique for fabricating composite thin films. The
thickness and stoichiometry of composite thin films prepared using ALD is dependent on the …

Thin films of nanostructured ZnS1− xSex with optimized growth parameters were prepared
by soft chemical route on glass substrates. Ammonia free precursors were used at 80° C …

By varying the ratio of the constituents, compound films can exhibit a widely tunable range of
physical properties. Atomic layer deposition (ALD) techniques are based on sequential, self …

Atomic layer deposition (ALD) was used to prepare thin-film mixtures of iridium and
platinum. By controlling the ratio between the iridium (III) acetylacetonate/oxygen cycles for Ir …

Zinc sulfur-selenide (ZnS x Se 1-x)(0≤ x≤ 1.0) thin films were grown on glass substrates
using photo-assisted chemical bath deposition technique and the deposited samples were …

In atomic layer deposition (ALD), the initial growth is of particular interest because it defines
the nucleation behavior and determines the minimum number of cycles to achieve a closed …

Polycrystalline thin films of ZnS x Se 1− x with x= 0, 0.25, 0.5, 0.75 and 1.0 have been
synthesized using close-spaced evaporation. The films were deposited onto glass …

The present work performs self-consistent ab initio full potential-linearized augmented plane
wave method to study the structural, electronic and thermodynamic properties of ZnSxSe1 …

In recent times, ZnS and ZnSe thin films are drawing tremendous attention towards opto-
electrical devices due to their optimal wide band gap energy. By alloying ZnS and ZnSe …

First-principle calculations were performed to study the structural, electronic, thermodynamic
and thermal properties of ZnS x Se 1− x ternary alloys using the full potential-linearized …