Humans rely increasingly on sensors to address grand challenges and to improve quality of
life in the era of digitalization and big data. For ubiquitous sensing, flexible sensors are …

Despite technical efforts and upgrades, advances in complementary metal–oxide–
semiconductor circuits have become unsustainable in the face of inherent silicon limits. New …

The development of next-generation electronics requires scaling of channel material
thickness down to the two-dimensional limit while maintaining ultralow contact resistance …

Abstract Two-dimensional (2D) semiconductors are promising channel materials for next-
generation field-effect transistors (FETs). However, it remains challenging to integrate …

Abstract The International Roadmap for Devices and Systems (IRDS) forecasts that, for
silicon-based metal–oxide–semiconductor (MOS) field-effect transistors (FETs), the scaling …

Two-dimensional transition-metal dichalcogenides (TMDs) are of interest for beyond-silicon
electronics,. It has been suggested that bilayer TMDs, which combine good electrostatic …

A grand family of two-dimensional (2D) materials and their heterostructures have been
discovered through the extensive experimental and theoretical efforts of chemists, material …

Field-effect transistors based on two-dimensional (2D) materials have the potential to be
used in very large-scale integration (VLSI) technology, but whether they can be used at the …

The scaling of silicon metal–oxide–semiconductor field-effect transistors has followed
Moore's law for decades, but the physical thinning of silicon at sub-ten-nanometre …

The metal–oxide–semiconductor field-effect transistor (MOSFET), a core element of
complementary metal–oxide–semiconductor (CMOS) technology, represents one of the …