Physical analysis of normally-off ALD Al2O3/GaN MOSFET with different substrates using self-terminating thermal oxidation-assisted wet etching technique
CY Huang, JY Wang, B Zhang, Z Fu, F Liu… - Chinese …, 2022 - iopscience.iop.org
Based on the self-terminating thermal oxidation-assisted wet etching technique, two kinds of
enhancement mode Al 2 O 3/GaN MOSFETs (metal–oxide–semiconductor field-effect …
enhancement mode Al 2 O 3/GaN MOSFETs (metal–oxide–semiconductor field-effect …