We study the nano-and micro-structures that increase the optical efficiency (OE) of the
complementary metal oxide semiconductor (CMOS) image pixels in visible and infrared. We …

The study proposes an ultra-thin back side illuminated (BSI) and top-illuminated, Ge on Si
photodetector (PD), for 1 to 1.4 microns wavelength range. The Ge thickness of 350 nm …

We study the nano-and micro-structures that increase the optical efficiency of the CMOS
image pixels in visible and infrared. We consider the difference between the micro-holes at …

Non-visible imaging is used in a variety of applications, including medical imaging, security,
astronomy, light detection and ranging (LiDAR), and more. Typical silicon-based detectors …

The study proposes an ultra-thin back side illuminated (BSI) and top-illuminated, Ge on Si
photodetector (PD), for a 1 to 1.4 microns wavelength range. The Ge thickness of 350 nm …

This study presents an ultra-thin backside illuminated (BSI) and top-illuminated germanium
(Ge) on silicon (Si) photodetector (PD) designed for a wavelength range of 1 to 1.4 microns …

The bandgap limitation of silicon (Si) limits the imaging capabilities of conventional Si CMOS
Image Sensors to wavelengths below 1100 nm and thus are inadequate for near-infrared …