AlGaN photonics: recent advances in materials and ultraviolet devices
D Li, K Jiang, X Sun, C Guo - Advances in Optics and Photonics, 2018 - opg.optica.org
AlGaN-based materials own direct transition energy bands and wide bandgap and thus can
be used in high-efficiency ultraviolet (UV) emitters and detectors. Over the past two decades …
be used in high-efficiency ultraviolet (UV) emitters and detectors. Over the past two decades …
Ultraviolet optoelectronic devices based on AlGaN-SiC platform: Towards monolithic photonics integration system
Rapid advancement of wide-bandgap AlGaN semiconductor materials offers tremendous
opportunities in the field of ultraviolet (UV) optoelectronics for a wide range of advanced …
opportunities in the field of ultraviolet (UV) optoelectronics for a wide range of advanced …
A review of AlGaN-based deep-ultraviolet light-emitting diodes on sapphire
Y Nagasawa, A Hirano - Applied Sciences, 2018 - mdpi.com
Featured Application Sterilization, UV curing and printing, and phototherapy. Abstract This
paper reviews the progress of AlGaN-based deep-ultraviolet (DUV) light emitting diodes …
paper reviews the progress of AlGaN-based deep-ultraviolet (DUV) light emitting diodes …
[HTML][HTML] Doping and compensation in Al-rich AlGaN grown on single crystal AlN and sapphire by MOCVD
In order to understand the influence of dislocations on doping and compensation in Al-rich
AlGaN, thin films were grown by metal organic chemical vapor deposition (MOCVD) on …
AlGaN, thin films were grown by metal organic chemical vapor deposition (MOCVD) on …
[HTML][HTML] On compensation in Si-doped AlN
Controllable n-type doping over wide ranges of carrier concentrations in AlN, or Al-rich
AlGaN, is critical to realizing next-generation applications in high-power electronics and …
AlGaN, is critical to realizing next-generation applications in high-power electronics and …
Surface kinetics in AlN growth: A universal model for the control of surface morphology in III-nitrides
AlN epitaxial thin films were grown on both vicinal (0001)-oriented native single crystal AlN
substrates and AlN templates grown on vicinal (0001)-oriented sapphire to develop a …
substrates and AlN templates grown on vicinal (0001)-oriented sapphire to develop a …
[HTML][HTML] High internal quantum efficiency in AlGaN multiple quantum wells grown on bulk AlN substrates
The internal quantum efficiency (IQE) of Al 0.55 Ga 0.45 N/AlN and Al 0.55 Ga 0.45 N/Al 0.85
Ga 0.15 N UVC MQW structures was analyzed. The use of bulk AlN substrates enabled us to …
Ga 0.15 N UVC MQW structures was analyzed. The use of bulk AlN substrates enabled us to …
The role of surface kinetics on composition and quality of AlGaN
Abstract Metal–polar, Al-rich AlGaN films were grown on both single crystalline AlN and
sapphire substrates. The role of surface morphology and surface kinetics on AlGaN …
sapphire substrates. The role of surface morphology and surface kinetics on AlGaN …
Three-dimensional quantum confinement of charge carriers in self-organized AlGaN nanowires: A viable route to electrically injected deep ultraviolet lasers
We report on the molecular beam epitaxial growth and structural characterization of self-
organized AlGaN nanowire arrays on Si substrate with high luminescence efficiency …
organized AlGaN nanowire arrays on Si substrate with high luminescence efficiency …
On the mechanism of highly efficient p-type conduction of Mg-doped ultra-wide-bandgap AlN nanostructures
Free hole concentrations up to∼ 6× 10 17 cm− 3 were measured in Mg-doped AlN
nanowires at room-temperature, which is several orders of magnitude larger than that of …
nanowires at room-temperature, which is several orders of magnitude larger than that of …