Wide bandgap devices in AC electric drives: Opportunities and challenges
Wide bandgap (WBG) device-based power electronics converters are more efficient and
lightweight than silicon-based converters. WBG devices are an enabling technology for …
lightweight than silicon-based converters. WBG devices are an enabling technology for …
Applications of Wide Bandgap (WBG) devices in AC electric drives: A technology status review
This paper is an effort to put together all the potential applications of Wide Bandgap (WBG)
devices in AC electric drives. Low inductance motors, high speed motors, and electric drives …
devices in AC electric drives. Low inductance motors, high speed motors, and electric drives …
Overview of high voltage SiC power semiconductor devices: Development and application
Research on high voltage (HV) silicon carbide (SiC) power semiconductor devices has
attracted much attention in recent years. This paper overviews the development and status …
attracted much attention in recent years. This paper overviews the development and status …
Overview of silicon carbide technology: Device, converter, system, and application
This paper overviews the silicon carbide (SiC) technology. The focus is on the benefits of
SiC based power electronics for converters and systems, as well as their ability in enabling …
SiC based power electronics for converters and systems, as well as their ability in enabling …
Temperature-dependent characterization, modeling, and switching speed-limitation analysis of third-generation 10-kV SiC MOSFET
The temperature-dependent characteristics of the third-generation 10-kV/20-A SiC MOSFET
including the static characteristics and switching performance are carried out in this paper …
including the static characteristics and switching performance are carried out in this paper …
Impact of power module parasitic capacitances on medium-voltage SiC MOSFETs switching transients
DN Dalal, N Christensen, AB Jørgensen… - IEEE Journal of …, 2019 - ieeexplore.ieee.org
Increased switching speeds of wide bandgap (WBG) semiconductors result in a significant
magnitude of the displacement currents through power module parasitic capacitances that …
magnitude of the displacement currents through power module parasitic capacitances that …
Accurate transient calorimetric measurement of soft-switching losses of 10-kV SiC MOSFETs and diodes
The characterization of soft-switching losses (SSL) of modern high-voltage SiC MOSFETS is
a difficult but necessary task in order to provide a sound basis for the accurate modeling of …
a difficult but necessary task in order to provide a sound basis for the accurate modeling of …
A 10 kV SiC MOSFET power module with optimized system interface and electric field distribution
This article introduces a holistic and systematic design methodology tailored to the 10 kV
silicon carbide (SiC) mosfet power modules. Multiobjective optimization was achieved with …
silicon carbide (SiC) mosfet power modules. Multiobjective optimization was achieved with …
Short-Circuit Characterization and Protection of 10-kV SiC mosfet
This paper presents the characterization of the temperature-dependent short-circuit
performance of a Gen3 10 kV/20 A silicon carbide (SiC) mosfet. The test platform consisting …
performance of a Gen3 10 kV/20 A silicon carbide (SiC) mosfet. The test platform consisting …
Power cell design and assessment methodology based on a high-current 10-kV SiC MOSFET half-bridge module
While 10-kV silicon-carbide (SiC) MOSFETs are gradually penetrating medium-voltage (MV)
applications, intertwined challenges concerning high-voltage insulation, high dv/dt …
applications, intertwined challenges concerning high-voltage insulation, high dv/dt …