(57) ABSTRACT A display device includes a pixel region having a plurality of pixel and a
driver circuit outside the pixel region. The pixels have a driving transistor and a switching …

An active matrix substrate includes a first TFT of a periph eral circuit and a second TFT
rranged in each pixel, wherein: the first TFT is a top gate or double gate TFT that includes an …

A first semiconductor layer is formed on an insulating surface. A first insulating layer for
covering an upper side of the first semiconductor layer is formed. On the first insulat ing …

US10559697B2 - Semiconductor device, manufacturing method of the semiconductor
device, or display device including the semiconductor device - Google Patents …

(57) ABSTRACT A display device is disclosed, which includes: a substrate having a display
region and a peripheral region adjacent to the display region; a first transistor disposed on …

(57) ABSTRACT A semiconductor device includes a buried dielectric layer, a first gate
structure, a second gate structure, a first source/drain region, a second source/drain region …

The invention allows formation of LTPS TFTs and TAOS TFTs on the same substrate. The
invention provides a display device including a substrate having a display area in which …

(57) ABSTRACT A semiconductor device includes an insulating substrate, a polysilicon
layer on the substrate, a first-gate-insulating layer on the polysilicon layer, a first metal layer …

(57) ABSTRACT A semiconductor device comprises a buried dielectric layer, a first gate
structure, a second gate structure, a first source/drain region, a second source/drain region …

A method of fabricating a semiconductor device is provided. First, a semiconductor structure
is provided, and the semiconductor structure includes a buried dielectric layer, a first gate …