The emergence of scanning tunneling microscope (STM) lithography and low temperature
molecular beam epitaxy (MBE) opens the possibility of creating scalable donor based …

In this work, the conduction band electron states and the associated intersubband-related
linear and nonlinear optical absorption coefficient and relative refractive index change are …

In the present paper, we theoretically investigate the effect of applied external fields, such as
electric, magnetic, and intense terahertz laser fields on the optical absorption and the …

The influence of hydrostatic pressure on the low-temperature electron conductivity in n-type
GaAs δ-doped single quantum wells is studied. The effect of the pressure on the electron …

Abstract Based on a Thomas–Fermi envelope function scheme we perform the calculation of
the electronic structure of a GaAs atomic layer doped field effect transistors (ALD‐FET). We …

We present a scalable method for calculating the electronic properties of a δ-doped
phosphorus layer in silicon and germanium. Our calculations are based on an sp 3 d 5 s …

A fully analytical approximation for the observable characteristics of many-electron atoms is
developed via a complete and orthonormal hydrogen-like basis with a single-effective …

We present a tight-binding calculation of the electronic structure of δ-doped quantum wells
in GaAs. A self-consistent potential obtained in the Thomas-Fermi approximation is …

We calculate the exchange and correlation potential of delta-doped quantum wells within
the Thomas-Fermi approximation. We present an analytical expression for the Hartree-Fock …

Electronic structure calculations in p-type B δ-doped Si quantum wells are carried out self-
consistently and within the Thomas-Fermi approximation. The self-consistent calculations …