The improvement of UV photodetection based on polymer/ZnO nanorod heterojunctions
We report on the fabrication of rectifying junctions between n-type ZnO nanorods (NRs) and
p-type polymer (poly (3, 4ethylenedioxythiophene): poly (styrenesulfonate)(PEDOT: PSS) …
p-type polymer (poly (3, 4ethylenedioxythiophene): poly (styrenesulfonate)(PEDOT: PSS) …
Influence of crystallographic orientation on Schottky barrier formation in gallium oxide
Highly rectifying graphite/β-Ga 2 O 3 Schottky junctions have been prepared by a simple low-
cost drop-casting process. The influence of two different crystal orientations on the current …
cost drop-casting process. The influence of two different crystal orientations on the current …
PPV derivative/ZnO nanorods heterojunction: Fabrication, Characterization and Near-UV light sensor development
Abstract Poly (1, 4-phenylenevinylene) derivative (PPV-C 6) based solution was spin-coated
onto hydrothermally grown and vertically aligned ZnO nanorods (ZnO NRs). The …
onto hydrothermally grown and vertically aligned ZnO nanorods (ZnO NRs). The …
Interface application of NiPt alloy nanoparticles decorated rGO nanocomposite to eliminate of contact problem between metal and inorganic/organic semiconductor
In this study, synthesis of monodisperse NiPt alloy NPs, preparation of rGO, decoration of the
NPs onto the rGO and interface application of the NiPt/rGO nanocomposite material were …
NPs onto the rGO and interface application of the NiPt/rGO nanocomposite material were …
Influence of surface polarity on optoelectronic properties of PEDOT: PSS/ZnO hybrid heterojunctions
The influence of polar and nonpolar crystallographic orientations of ZnO substrates on the
current transport mechanism in poly (3, 4‐ethylenedioxythiophene) poly (4 …
current transport mechanism in poly (3, 4‐ethylenedioxythiophene) poly (4 …
[PDF][PDF] Extraction of the electrical parameters of the Au/InSb/InP Schottky diode in the temperature range (300 K-425 K)
A Sadoun, I Kemerchou - International Journal of Energetica (IJECA), 2020 - ajol.info
In this work, we have presented a theoretical study of Au/InSb/InP Schottky diode based on
current-voltage (IV) measurement in the temperature range (300 K-425 K). Electrical …
current-voltage (IV) measurement in the temperature range (300 K-425 K). Electrical …
[PDF][PDF] 石墨烯/硅光电探测器的IV 及CV 特性
方昕宇， 陈俊 - 光子学报, 2019 - researching.cn
设计并制备了基于石墨烯/n 型硅肖特基结的光电探测器, 并从能带角度研究和分析了其IV 及CV
特性. 结果表明, 石墨烯/氮化硅/硅(金属-绝缘层-半导体) 电容器对器件的IV 及CV …
特性. 结果表明, 石墨烯/氮化硅/硅(金属-绝缘层-半导体) 电容器对器件的IV 及CV …