Electromigration in three-dimensional integrated circuits

Z Shen, S Jing, Y Heng, Y Yao, KN Tu… - Applied Physics Reviews, 2023 - pubs.aip.org
The development of big data and artificial intelligence technology is increasing the need for
electronic devices to become smaller, cheaper, and more energy efficient, while also having …

Recent advances and trends in Cu–Cu hybrid bonding

JH Lau - IEEE Transactions on Components, Packaging and …, 2023 - ieeexplore.ieee.org
In this study, the recent advances and trends in Cu–Cu hybrid bonding will be investigated.
Emphasis is placed on the definition, kinds, advantages and disadvantages, challenges …

[HTML][HTML] A kinetic model of copper-to-copper direct bonding under thermal compression

KC Shie, AM Gusak, KN Tu, C Chen - Journal of Materials Research and …, 2021 - Elsevier
A surface creep model is presented for analyzing Cu-to-Cu direct bonding under thermal
compression. The driving force is a pressure gradient, which squeezes layers of atoms to fill …

Technological evolution of image sensing designed by nanostructured materials

MA Iqbal, M Malik, TK Le, N Anwar, S Bakhsh… - ACS Materials …, 2023 - ACS Publications
Imaging sensing holds a remarkable place in modern electronics and optoelectronics for the
complementary metal-oxide-semiconductor integration of high-speed optical …

Low-temperature hybrid bonding with high electromigration resistance scheme for application on heterogeneous integration

ZJ Hong, D Liu, HW Hu, CK Hsiung, CI Cho… - Applied Surface …, 2023 - Elsevier
The novel low-temperature Cu/SiO 2 hybrid bonding scheme using cluster-Ag passivation
has been proposed in this study for the heterogeneous integration application. With the …

Development of face-to-face and face-to-back ultra-fine pitch Cu-Cu hybrid bonding

Y Kagawa, T Kamibayashi, Y Yamano… - 2022 IEEE 72nd …, 2022 - ieeexplore.ieee.org
We have developed the novel fabrication process that has realized the robust ultra-fine
pitch, 1 μm pitch, wafer level face-to-face Cu-Cu hybrid bonding. For the stable electrical …

Low-Temperature Cu/SiO2 Hybrid Bonding with Low Contact Resistance Using (111)-Oriented Cu Surfaces

JJ Ong, WL Chiu, OH Lee, CW Chiang, HH Chang… - Materials, 2022 - mdpi.com
We adopted (111)-oriented Cu with high surface diffusivity to achieve low-temperature and
low-pressure Cu/SiO2 hybrid bonding. Electroplating was employed to fabricate arrays of Cu …

Epitaxial growth of (111) nanotwinned Ag on (111) nanotwinned Cu films for low-temperature Cu–Cu bonding

HH Tseng, HC Liu, MH Yu, JJ Ong… - Crystal Growth & …, 2023 - ACS Publications
Copper joints have replaced solder interconnects in integrated circuits due to their great
electrical properties and lower-temperature processing. To isolate Cu from oxidizing during …

Wafer-to-wafer hybrid bonding development by advanced finite element modeling for 3-D IC packages

L Ji, FX Che, HM Ji, HY Li… - IEEE Transactions on …, 2020 - ieeexplore.ieee.org
This article focuses on the 3-D modeling methodology development of the wafer-to-wafer
hybrid bonding (W2W-HB) annealing process. With its successful application in a 2-stack …

HDR CMOS image sensors for automotive applications

I Takayanagi, R Kuroda - IEEE Transactions on Electron …, 2022 - ieeexplore.ieee.org
Because of various purposes and high dynamic range (HDR) of brightness of objects in
automotive applications, HDR image capture is a primary requirement. In this article, HDR …