Nobel Lecture: Background story of the invention of efficient blue InGaN light emitting diodes

S Nakamura - Reviews of Modern Physics, 2015 - APS
Nobel Lecture: Background story of the invention of efficient blue InGaN light emitting diodes
Page 1 Nobel Lecture: Background story of the invention of efficient blue InGaN light emitting …

GaN, AlN, and InN: a review

S Strite, H Morkoç - Journal of Vacuum Science & Technology B …, 1992 - pubs.aip.org
The status of research on both wurtzite and zinc‐blende GaN, AlN, and InN and their alloys
is reviewed including exciting recent results. Attention is paid to the crystal growth …

P-type conduction in Mg-doped GaN treated with low-energy electron beam irradiation (LEEBI)

H Amano, M Kito, K Hiramatsu… - Japanese journal of …, 1989 - iopscience.iop.org
Distinct p-type conduction is realized with Mg-doped GaN by the low-energy electron-beam
irradiation (LEEBI) treatment, and the properties of the GaN pn junction LED are reported for …

Large‐band‐gap SiC, III‐V nitride, and II‐VI ZnSe‐based semiconductor device technologies

H Morkoc, S Strite, GB Gao, ME Lin… - Journal of Applied …, 1994 - pubs.aip.org
In the past several years, research in each of the wide‐band‐gap semiconductors, SiC,
GaN, and ZnSe, has led to major advances which now make them viable for device …

[图书][B] The blue laser diode: GaN based light emitters and lasers

S Nakamura, G Fasol - 2013 - books.google.com
Shuji Nakamura's development of commercial light emitters from Gallium Nitride and related
materials has recently propelled these materials into the mainstream of interest. It is very …

Growth and applications of group III-nitrides

O Ambacher - Journal of physics D: Applied physics, 1998 - iopscience.iop.org
Recent research results pertaining to InN, GaN and AlN are reviewed, focusing on the
different growth techniques of Group III-nitride crystals and epitaxial films, heterostructures …

GaN growth using GaN buffer layer

SNS Nakamura - Japanese Journal of Applied Physics, 1991 - iopscience.iop.org
High-quality gallium nitride (GaN) film was obtained for the first time using a GaN buffer layer
on a sapphire substrate. An optically flat and smooth surface was obtained over a two-inch …

The blue laser diode. The complete story

S Nakamura, S Pearton, G Fasol - Measurement Science and …, 2001 - iopscience.iop.org
The story of Shuji Nakamura and the blue laser diode is remarkable. It is clear from this book
that he enjoys this fact and wishes his readers to become familiar with his success …

Hole compensation mechanism of p-type GaN films

S Nakamura, N Iwasa, MSM Senoh… - Japanese Journal of …, 1992 - iopscience.iop.org
Low-resistivity p-type GaN films, which were obtained by N 2-ambient thermal annealing or
low-energy electron-beam irradiation (LEEBI) treatment, showed a resistivity as high as 1× …

High-power GaN pn junction blue-light-emitting diodes

S Nakamura, TMT Mukai… - Japanese Journal of …, 1991 - iopscience.iop.org
High-power pn junction blue-light-emitting diodes (LEDs) were fabricated using GaN films
grown with GaN buffer layers. The external quantum efficiency was as high as 0.18%. Output …