S Strite, H Morkoç - Journal of Vacuum Science & Technology B …, 1992 - pubs.aip.org
The status of research on both wurtzite and zinc‐blende GaN, AlN, and InN and their alloys is reviewed including exciting recent results. Attention is paid to the crystal growth …
H Amano, M Kito, K Hiramatsu… - Japanese journal of …, 1989 - iopscience.iop.org
Distinct p-type conduction is realized with Mg-doped GaN by the low-energy electron-beam irradiation (LEEBI) treatment, and the properties of the GaN pn junction LED are reported for …
H Morkoc, S Strite, GB Gao, ME Lin… - Journal of Applied …, 1994 - pubs.aip.org
In the past several years, research in each of the wide‐band‐gap semiconductors, SiC, GaN, and ZnSe, has led to major advances which now make them viable for device …
Shuji Nakamura's development of commercial light emitters from Gallium Nitride and related materials has recently propelled these materials into the mainstream of interest. It is very …
O Ambacher - Journal of physics D: Applied physics, 1998 - iopscience.iop.org
Recent research results pertaining to InN, GaN and AlN are reviewed, focusing on the different growth techniques of Group III-nitride crystals and epitaxial films, heterostructures …
SNS Nakamura - Japanese Journal of Applied Physics, 1991 - iopscience.iop.org
High-quality gallium nitride (GaN) film was obtained for the first time using a GaN buffer layer on a sapphire substrate. An optically flat and smooth surface was obtained over a two-inch …
S Nakamura, S Pearton, G Fasol - Measurement Science and …, 2001 - iopscience.iop.org
The story of Shuji Nakamura and the blue laser diode is remarkable. It is clear from this book that he enjoys this fact and wishes his readers to become familiar with his success …
S Nakamura, N Iwasa, MSM Senoh… - Japanese Journal of …, 1992 - iopscience.iop.org
Low-resistivity p-type GaN films, which were obtained by N 2-ambient thermal annealing or low-energy electron-beam irradiation (LEEBI) treatment, showed a resistivity as high as 1× …
S Nakamura, TMT Mukai… - Japanese Journal of …, 1991 - iopscience.iop.org
High-power pn junction blue-light-emitting diodes (LEDs) were fabricated using GaN films grown with GaN buffer layers. The external quantum efficiency was as high as 0.18%. Output …